Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Abstract

In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.