Field-plate design optimization for high-power GaN high electron mobility transistors

Kurbanova, N E; Demchenko, O. I.; Velikovskiy, L. E.; Sim, P. E.

doi:10.1109/sibcon.2017.7998520

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Field-plate design optimization for high-power GaN high electron mobility transistors

Cited by 4 publications

References 9 publications

Simulation Based Breakdown Voltage Analysis Of 3-Step Field Plate AlGaN/GaN HEMTs

Simulation Based Breakdown Voltage Analysis Of 3-Step Field Plate AlGaN/GaN HEMTs

An Enhancement Mode Double T- Gate Field Plate GaN HEMT for Power Electronics Application

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

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