FinFET based Comparison analysis of power and delay of adder topologies

Navaneetha, Alluri; Bikshalu, Kalagadda

doi:10.1016/j.matpr.2021.01.858

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…CMOS [40] Moderate High High FinFET [41] Low Very High Very High Memristors [42] Very Low Moderate Moderate…”

Section: Technology Power Consumption Speed Scalabilitymentioning

confidence: 99%

Advancements in Artificial Intelligence Circuits and Systems (AICAS)

Miller,

Durlik,

Kostecka

et al. 2023

Electronics

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In the rapidly evolving landscape of electronics, Artificial Intelligence Circuits and Systems (AICAS) stand out as a groundbreaking frontier. This review provides an exhaustive examination of the advancements in AICAS, tracing its development from inception to its modern-day applications. Beginning with the foundational principles that underpin AICAS, we delve into the state-of-the-art architectures and design paradigms that are propelling the field forward. This review also sheds light on the multifaceted applications of AICAS, from optimizing energy efficiency in electronic devices to empowering next-generation cognitive computing systems. Key challenges, such as scalability and robustness, are discussed in depth, along with potential solutions and emerging trends that promise to shape the future of AICAS. By offering a comprehensive overview of the current state and potential trajectory of AICAS, this review serves as a valuable resource for researchers, engineers, and industry professionals looking to harness the power of AI in electronics.

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“…CMOS [40] Moderate High High FinFET [41] Low Very High Very High Memristors [42] Very Low Moderate Moderate…”

Section: Technology Power Consumption Speed Scalabilitymentioning

confidence: 99%

Advancements in Artificial Intelligence Circuits and Systems (AICAS)

Miller,

Durlik,

Kostecka

et al. 2023

Electronics

View full text Add to dashboard Cite

show abstract

“…Through recent years, the expanding usage of information and communication technologies (ICT), has caused an exponential acceleration to develop improvements in telecommunication technologies. Which is possible due to various electronic devices, but even more in particular to the field effect transistors (FETs) (Ramirez-Garcia et al, 2019;Garg et al, 2020;Navaneetha & Bikshalu, 2021). The use of these kinds of electronic devices allows the development of reliable circuits, which can differ in operation speeds, and with low production costs.…”

Section: Introductionmentioning

confidence: 99%

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

Hamui,

Sánchez-Vergara,

Ferrer-Garcia

2023

JART

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The Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical characteristics. That allow its application in sensors, amplifiers, attenuators signal filtering, and high-frequency response devices, like biosensing, wearable electronics, optoelectronics, telecommunications, and other potential applications. Throughout this investigation, a ClInPc flexible OFET with Al2O3 embedded particles in nylon 11, was manufactured and characterized to evaluate the optoelectronic and morphological properties. For the manufacturing, a high-vacuum thermal evaporation deposition technique was used, and UV-vis spectroscopy analysis and scanning electron microscopy were conducted to evaluate the optoelectronic and morphological properties. Also, a study regarding the electrical characteristics for different time-dependent wavefunction input signals, changing the input voltage and frequency, has been conducted. The latter was driven to determine the time-response characteristics, gains, phase shift and to determine whether the device function as an attenuator or an amplifier with the selected configuration. The device has been modelled to obtain the OFET operation parameters. A resulting capacitance of 567 pF was calculated. Uniform and continuous films where obtained, which guarantees an efficient charge transport. For all signals the output voltage is lower than that of the input voltage. Also, for the higher frequency the output voltage is decreased compared to lower frequencies. Gains decreasing variation of up to 0.05 indicate the operating application as an attenuator. Phase variation of up to 100 °, resulted while varying the input frequency. The model resulted on a gate capacitance value between 500 and 1180 pF, and gate-drain capacitance value between 50 and 500 pF. All of this could give evidence that state of the art ClInPc flexible OFET device with Al2O3 embedded nanoparticles in nylon 11 could be used toward current high-performance frequency-dependent flexible applications.

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High speed and low power hybrid adder using 22 nm SG-TG FinFET

Arora,

Tripathi,

Raj

2024

Phys. Scr.

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This paper demonstrates a new 22-T (transistor) hybrid adder for low-power applications using 22nm shorted gate (SG) tri-gate (TG) FinFET technology. Large conducting channels and increased gate control make FinFET suitable for high-speed low-power computing circuits. The proposed hybrid adder is designed using pass transistor and CMOS logic. Also, it adopts the state-of-the-art techniques of dynamic leakage balancing on the ground path and stacking ground transistors that reduce parasitic effects and increase the speed of the logic transitions compared to traditional designs. Extensive simulations were executed to characterize for PDP (Power Delay Product), power dissipation, and delay of the hybrid adder circuit. From the Monte Carlo analysis, the robustness and efficiency of the circuit are also observable for minimum variation in power and delay due to process voltage and temperature (PVT) variations. Besides, concerning the supply variability and temperature, the circuit shows excellent stability by keeping the power consumption and delay performance consistent. The proposed 22-T hybrid adder using 22nm SG-TG FinFET are very well-suited in low power and high-speed processors showing highly stable behaviour with reduced process variability.

show abstract

FinFET based Comparison analysis of power and delay of adder topologies

Cited by 4 publications

References 14 publications

Advancements in Artificial Intelligence Circuits and Systems (AICAS)

Advancements in Artificial Intelligence Circuits and Systems (AICAS)

Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

High speed and low power hybrid adder using 22 nm SG-TG FinFET

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