2013
DOI: 10.1021/nl403114g
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Flash Ignition of Freestanding Porous Silicon Films: Effects of Film Thickness and Porosity

Abstract: We report the first successful xenon flash ignition of freestanding porous Si films in air. The minimum flash ignition energy (Emin) first decreases and then increases with increasing the porous Si film thickness due to the competition between light absorption and heat loss. The Emin is lower for higher porosity film because high porosity reduces both the heat capacity and the thermal conductivity, facilitating the temperature rise. These results are important for initiating controlled porous Si combustion and… Show more

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Cited by 41 publications
(19 citation statements)
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“…This rapid assembly can be achieved by extremely high temperature (peak temperature, T peak ≈ 600 °C) annealing within a millisecond duration enabled by the intensive photothermal effect from flash light. Finite element method (FEM) analysis of the photothermal effect [average energy density = 78.8 J cm −2 and light pulse duration (FWHM): 15 ms] at the silicon substrate are shown in Figure b,c . Owing to the 2D large area processability of our xenon flash lamp system, the temperature of large surface area of silicon substrate (10 mm × 10 mm) uniformly reaches over 600 °C (Figures S1–S3, Supporting Information).…”
Section: Properties Of the Bcps Of Low‐χ Sm (Ps‐b‐pmma) S2v (Ps‐b‐p2mentioning
confidence: 99%
“…This rapid assembly can be achieved by extremely high temperature (peak temperature, T peak ≈ 600 °C) annealing within a millisecond duration enabled by the intensive photothermal effect from flash light. Finite element method (FEM) analysis of the photothermal effect [average energy density = 78.8 J cm −2 and light pulse duration (FWHM): 15 ms] at the silicon substrate are shown in Figure b,c . Owing to the 2D large area processability of our xenon flash lamp system, the temperature of large surface area of silicon substrate (10 mm × 10 mm) uniformly reaches over 600 °C (Figures S1–S3, Supporting Information).…”
Section: Properties Of the Bcps Of Low‐χ Sm (Ps‐b‐pmma) S2v (Ps‐b‐p2mentioning
confidence: 99%
“…21 This system was used to test the original MSST, 12 and is important for various applications, including energetic materials. 22 We use a 512-atom system in an initial cubic supercell with a side length of 21.75 Å , which gives a zero-pressure diamond structure with its [100], [010], and [001] directions along the supercell sides. The equations of motion are solved using an explicit reversible integrator 23 with a time step of 1.2 fs.…”
mentioning
confidence: 99%
“…Silicon can also be fabricated as an energetic material by creating high surface area powders or porous films [85][86][87]. Porous silicon is created by electrochemical etching and is a highly tunable system for ignition properties and integration into semiconductor based devices [88,89].…”
Section: Semiconductorsmentioning
confidence: 99%