Flat Noise Figure Semiconductor Optical Amplifiers

Yu, Shengrui; Gallet, Antonin; Dahdah, Nayla El; Elfaiki, Hajar; Demirtzioglou, Iosif; Godard, Loïg; Brenot, R.

doi:10.1109/ecoc52684.2021.9605812

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…In the experiment, thin multiple QWs with low loss were used to achieve a high-saturation output power and low NF, while also achieving a 15 dB gain and a 19.6 dBm saturation output power over a 3 dB gain bandwidth of 120 nm. In 2021, the Yu, SQ research group reported a 1550 nm low NF SOA design with a detuned material at the input [61]. The device kept a low NF, below 6.5 dB, over the C and L bands.…”

Section: Low-noise Figure (Nf)mentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Low-noise Figure (Nf)mentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…The noise figure which quantifies the electrical signal to noise ratio degradation of an amplified optical signal in a SOA can be related to its intrinsic parameters and can be expressed in dB at its chip level as follows [31]:…”

Section: ) Noise Figure Measurementmentioning

confidence: 99%

“…In the amplification range, we have hc/λ − ΔE F < 0. It has recently been demonstrated that a low and flat NF can be obtained by reducing the term e hc/λ−ΔE F kT using high ΔE F material [31]. Alternatively, the NF can be reduced by reducing the temperature via the two temperature dependent terms in (4).…”

Section: ) Noise Figure Measurementmentioning

confidence: 99%

Towards Cryophotonics: Experimental Characterization of SOA at Cryogenic Temperatures

et al. 2023

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We present an experimental system study of the influence of cryogenic temperatures on the performance of a commercial Semiconductor Optical Amplifier (SOA) over the range 240 K -70 K. Significant performance improvements were observed when the SOA is in cryogenic conditions. At 70 K and 100 mA we were able to measure a gain as high as 52 dB. At 240 K, only 50 mA of input current are necessary to reach a gain of 37 dB, and a noise figure of 3.8 dB, close to the theoretical limit. The SOA efficiency at power saturation, rises from 2.2% at ambient temperature up to 41% at 100 mA and 120 K.

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