Flexible photodetectors based on phase dependent PbI<sub>2</sub> single crystals

Zhong, Mianzeng; Huang, Le; Deng, Hui‐Xiong; Wang, Xiaoting; Li, Bo; Wei, Zhongming; Li, Jingbo

doi:10.1039/c6tc00918b

Cited by 104 publications

(102 citation statements)

References 47 publications

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“…The fabrication and investigation of 2D materials are still needed for their further applications in various areas, such as the large‐scale controllable fabrication of high‐quality monolayer or few‐layer TMDs and the relatively poor transfer properties compared with the commercial materials. Based on this, novel improved methods, such as PVD, supercooling CVD, and so on, are considered to have potential in the synthesis of monolayer or few‐layer TMDs. Meanwhile, new materials with multifunctional properties, such as BP, PbI 2 , InSe, Cu 2 S, and so on, have been developed and studied.…”

Section: Discussionmentioning

confidence: 99%

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Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

et al. 2018

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2D transition‐metal dichalcogenides (TMDs), which exhibit fascinating and fantastic properties, have promising applications in future electronic devices and photoelectric devices. Here, the recent research on 2D TMDs is summarized, including single components, 2D doped TMDs, and 2D van der Waals heterostructures. The physical picture, synthetic methods, and optoelectronic properties of these 2D materials are comprehensively described. Opportunities and emerging applications of 2D materials in the future are briefly discussed.

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Section: Discussionmentioning

confidence: 99%

“…Based on this, novel improved methods, such as PVD, supercooling CVD, and so on, are considered to have potential in the synthesis of monolayer or few‐layer TMDs. Meanwhile, new materials with multifunctional properties, such as BP, PbI 2 , InSe, Cu 2 S, and so on, have been developed and studied.…”

Section: Discussionmentioning

confidence: 99%

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

et al. 2018

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“…Different from the properties of TMDs like MoS 2 and WSe 2 which experience an indirect to direct bandgap change when the layer number is reduced to monolayer, multilayered PbI 2 is a direct bandgap semiconductor while the monolayer counterpart owns an indirect bandgap . Thus, multilayered PbI 2 is favorable for constructing UV photodetectors with a higher light absorbance capability than the monolayer counterpart …”

Section: Figure Of Merits For Photodetectors Based On Typical 2d Matementioning

confidence: 99%

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Xiao

Liang

2019

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Optoelectronic device research is experiencing a rapid development and has been attracting a great deal of attentions from both academia and industry. As one of the most important devices in optoelectronic system, photodetectors are widely used in flame and environmental monitoring, night vision, communication, and imaging ascribing to their ability to convert optical signal to electrical signal sensitively and accurately. Driven by the Moore's Law, the feature size of the highly integrated electronic devices is approaching to several nanometers level in recent years, [1,2] which makes it urgent to exploit photodetectors with equivalent size in order to construct highly integrated and compatible photodetection system. However, when the size of a photodetector is reduced to the optical diffraction limit (less than or equal to the wavelength of incident light), the performance of the photodetector would be deteriorated 2D lead iodide (PbI 2 ) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution-based method is developed to synthesize ultraflat PbI 2 nanoflakes for high-performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow-rate crystal growth, high-quality PbI 2 nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI 2 nanoflakes exhibit a high photoresponsivity of 0.51 A W −1 , a high detectivity of 4.0 × 10 10 Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI 2 nanoflakes.

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“…As it includes a deposition of a semiconductor epitaxial layer to be grown on a silicon wafer substrate and then anneal it at high temperature for its stability. Many other types of semiconductor materials are used for photodetectors and photo‐harvesting applications like germanium, titanium dioxide (TiO 2 ),, indium gallium arsenide (InGaAs), cadmium selenide (CdSe), lead sulphide (PbS), lead iodide (PbI 2 ), as well as some organic materials also . Among which PbI 2 is very interesting because of its wide bandgap energy with higher stability and containing many other fascinating physical properties .…”

Section: Introductionmentioning

confidence: 99%

“…Among which PbI 2 is very interesting because of its wide bandgap energy with higher stability and containing many other fascinating physical properties . Different PbI 2 morphologies like nanosheets and nanowires are used for high energy photodetection applications and operated under minimum noise level ,. Most of the photodetector in present days are fabricated by vacuum technology.…”

Section: Introductionmentioning

confidence: 99%

Lead Iodide Microcrystals in Carbon Composite Matrix for Low Power Photodetectors

et al. 2017

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Lead iodide (PbI2) microcrystals based photodetector were developed by a simple printing method. Carbon composite paste was fabricated by homogeneous mixing of PbI2 microcrystals, commercial graphite powder, and activated carbon. Composite carbon paste was printed on top of thermally deposited Al electrodes on the glass substrates to fabricate the photodetector. Controlled variation of PbI2 loading established that 10% PbI2 in carbon composite is the best candidate for the highest On/Off ratio. The photo generated current was manifested by the defect present in the graphite and the PbI2 microcrystals interfaces. The effect enables us to develop cost effective printing based photodetector which can work in very low voltage region for low‐power printed electronics.

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Flexible photodetectors based on phase dependent PbI₂ single crystals

Abstract: Single-crystalline quasi-2D PbI2 nanosheets and quasi-1D nanowires, which showed different crystallographic symmetries, were controllably synthesized and utilized in flexible photodetectors with excellent mechanical stability and durability.

Cited by 104 publications

References 47 publications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Lead Iodide Microcrystals in Carbon Composite Matrix for Low Power Photodetectors

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Flexible photodetectors based on phase dependent PbI2 single crystals

Abstract: Single-crystalline quasi-2D PbI2 nanosheets and quasi-1D nanowires, which showed different crystallographic symmetries, were controllably synthesized and utilized in flexible photodetectors with excellent mechanical stability and durability.

Cited by 104 publications

References 47 publications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Various Structures of 2D Transition‐Metal Dichalcogenides and Their Applications

Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Lead Iodide Microcrystals in Carbon Composite Matrix for Low Power Photodetectors

Contact Info

Product

Resources

About

Flexible photodetectors based on phase dependent PbI₂ single crystals

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors