Flexible solar cells based on cadmium sulfide and telluride

Khrypunov, G. S.; Chernykh, E. P.; Kovtun, N. A.; Belonogov, E. K.

doi:10.1134/s1063782609080156

Cited by 23 publications

(14 citation statements)

References 8 publications

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“…For instance, the record energy conversion efficiency of CdTe solar cells achieved today is only ∼16% as compared with the maximum theoretical prediction of 29%. 5,[12][13][14] This sizeable discrepancy in efficiency is largely due to the various micro-/nano-scale defects formed within the multilayered films. 4,7,12,[15][16][17] The property nonuniformity of the radiation-detecting CZT crystals, on the other hand, has been the limiting factor for both a poor performance and a high material cost (arising from a low yield of usable portion of ingots).…”

Section: Introductionmentioning

confidence: 99%

“…This is because the material has good manufacturability, high solar energy absorption coefficients, and optimal band gaps for photoelectric conversion under solar radiation. [5][6][7] In the other application, the CdTe-based Cd 1−x Zn x Te (CZT) alloys have long been the dominant semiconducting material utilized in radiation detectors. [8][9][10][11] This is because these alloys have high atomic numbers for efficient radiation-atomic interactions and ideal band gaps for both high electron-hole creation and low leakage current.…”

Section: Introductionmentioning

confidence: 99%

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High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

et al. 2012

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CdTe has been a special semiconductor for constructing the lowest-cost solar cells, and the CdTe-based Cd 1−x Zn x Te alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here, we demonstrate the capability of a bond-order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

et al. 2012

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“…Recently, flexible solar cells based on CdS/CdTe and based on copper and indium diselenide CuInSe 2 (CIS) have been actively developed (see, for example, [9][10][11]).…”

Section: Introductionmentioning

confidence: 99%

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Khrypunov¹,

Kudii²,

Kovtun³

et al. 2019

International Journal of Photoenergy

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By the method of nonreactive high-frequency magnetron sputtering on Upilex polyimide films, transparent and conductive layers of ITO were obtained. These layers, after high-temperature annealing, at temperatures typical for the solar cell formation, had a resistance of 11 ohm/□ and a transmittance of up to 72%. The use of such an ITO layer with the addition of a 100 nm thick layer of undoped zinc oxide, as the front contact, and Cu/ITO composition, as the back contact, made it possible to obtain a flexible solar cell polyimide/ITO/CdS/CdTe/Cu/ITO with an efficiency of 10.4%. With a thickness of the base layer of cadmium telluride 2.5 μm, the average transmittance of the SC in the 850-1100 nm wavelength range is 46.8%. The developed design of a flexible solar cell based on cadmium telluride due to the use of a transparent back contact with a comb metal electrode is easily interfaced with existing designs of flexible solar cells based on copper and indium diselenide, which allow the formation of flexible tandem photoelectric converters CdTe/CuInSe2.

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“…The semiconductor structures based on crystalline silicon occupy the principal part of the world market despite the intense thin-film technologies development [1]. The asymmetric + -junction is known as one of the basic semiconductor structures for silicon photovoltaic.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Kozinetz¹,

Skryshevsky²

2018

Ukr. J. Phys.

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The insertion of a thin amorphized layer (AL) in the space charge region of a silicon solar cell is proposed as a way to improve the conversion efficiency due to the impurity photovoltaic effect. Previously, this approach had been applied to a cell with a layer inserted in the emitter by the ion implantation. The insertion of such layer in the space charge region is founded to be preferable, because a better control over the recombination (via energy levels in the band gap and local states of interfaces) can be achieved. The parameters of a modified device are investigated by the numerical simulation, and it is concluded that the layer parameters have a crucial influence on the cell conversion efficiency. Based on our simulation results, the optimal AL and the height of barriers are determined. In such a case, the short circuit current density is improved due to the absorption of photons with energy less than a silicon band gap of 1.12 eV in AL, whereas the open circuit voltage and fill factor remain unchanged. Theoretically, the increase in the efficiency by 1-2% is achievable. In the non-optimal case, the degradation of a short circuit current and the fill factor eliminate the positive effect of an additional photogeneration in AL.K e y w o r d s: amorphized layer, space charge region, + -silicon solar cell.

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Flexible solar cells based on cadmium sulfide and telluride

Cited by 23 publications

References 8 publications

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

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Flexible solar cells based on cadmium sulfide and telluride

Cited by 23 publications

References 8 publications

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

High-fidelity simulations of CdTe vapor deposition from a bond-order potential-based molecular dynamics method

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe2

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

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Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂