2004
DOI: 10.1103/physrevb.69.113202
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Formation of midgap states and ferromagnetism in semiconductingCaB6

Abstract: We present a consistent overall picture of the electronic structure and ferromagnetic interaction in CaB 6 , based on our joint transport, optical, and tunneling measurements on high-quality defect-controlled single crystals. Pure CaB 6 single crystals, synthesized with 99.9999% pure boron, exhibited fully semiconducting characteristics, such as monotonic resistance for 2-300 K, a tunneling conductance gap, and an optical absorption threshold at 1.0 eV. Boron-related defects formed in CaB 6 single crystals syn… Show more

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Cited by 37 publications
(50 citation statements)
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“…Valence state also influences these properties as divalent hexaborides are commonly insulators or semiconductors and trivalent hexaborides are commonly metallic [5,33,37]. As noted earlier, KB 6 is identified as not a "normal" metal [12] and ThB 6 is a paramagnetic metal [13].…”
Section: Electronic Structuresmentioning
confidence: 99%
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“…Valence state also influences these properties as divalent hexaborides are commonly insulators or semiconductors and trivalent hexaborides are commonly metallic [5,33,37]. As noted earlier, KB 6 is identified as not a "normal" metal [12] and ThB 6 is a paramagnetic metal [13].…”
Section: Electronic Structuresmentioning
confidence: 99%
“…For example, in CaB 6 the presence of boron-related defects (the difference between 6N and 3N purity or << 1%) are closely associated with carrier doping and the formation of mid-gap states 0.18 eV below the conduction band [5]. Small amounts of La substitution for Ca are also associated with magnetic effects [44].…”
Section: Stoichiometrymentioning
confidence: 99%
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“…Although it now seems quite conclusive that the ferromagnetism is originated from the external impurities on the surface of the samples [6,7] rather than from an intrinsic property of the system, the electronic band structure of the bulk systems is still under debate. While Fermi surface measurements [8] imply that CaB 6 is a semimetal, angle-resolved photoemission spectroscopy (ARPES), momentum-resolved inelastic x-ray scattering [9], and transport [10] measurements indicate that CaB 6 is a semiconductor with a gap larger than 1.0 eV. Theoretically, the local density approximation (LDA) has predicted a semimetallic band structure for CaB 6 with a small overlap of boron-bands at the X point of the Brillouin zone [11][12][13][14], but it is well known that LDA calculations often underestimate the eigenenergy gap.…”
mentioning
confidence: 99%