Formation of multiple quantum wires by strain-induced lateral-layer ordering process

Pearah, P. J.; Chen, A.C.; Moy, A. M.; Hsieh, K. C.; Cheng, K. Y.

doi:10.1016/0022-0248(93)90756-m

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1995

2004

Publication Types

Select...

Book3

Article2

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 7 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8 It is well known that lateral composition modulation spontaneously occurs when a short period superlattice is fabricated. [9][10][11][12] Some authors have reported that the natural composition modulation arises even in bulk ternary and quaternary alloy semiconductors, such as InAs x Sb 1Ϫx ͑Ref. 13͒, In 1Ϫx Ga x As y P 1Ϫy ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Excitons at a single localized center induced by a natural composition modulation in bulkGa0.5In0.5P

Sugisaki¹,

Ren²,

Nishi

et al. 2000

Phys. Rev. B

View full text Add to dashboard Cite

Optical properties of Ga 0.5 In 0.5 P grown by gas-source molecular beam epitaxy are reported. A strong optical anisotropy due to the spontaneous lateral composition modulation of Ga and In was observed in macro-and micro-photoluminescence ͑PL͒ spectra. The micro-PL study revealed that the PL band is composed of sharp lines that arise from the radiative decay of excitons trapped at local potential minima caused by the composition modulation. Anisotropy in PL rise and decay times was also observed. The detection energy dependence of the PL decay time is well explained by considering the relaxation process of excitons from shallow traps to deep traps.

show abstract

Section: Introductionmentioning

confidence: 99%