Formation of SiGe nanocrystals in HfO2 using <i>in situ</i> chemical vapor deposition for memory applications

Gupta, Rohit; Yoo, Won Jong; Wang, Yingqian; Tan, Zerlinda Y. L.; Samudra, Ganesh S.; Lee, Sungjoo; Chan, D.S.H.; Loh, Kian Ping; Bera, L. K.; Balasubramanian, N.; Kwong, Dim-Lee

doi:10.1063/1.1758297

Cited by 27 publications

(12 citation statements)

References 7 publications

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“…Although Ge-incorporated HfON has been proposed to enhance the charge-trapping capability for nonvolatile memory [20], most Ge-related materials for charge-trapping applications are pertinent to nanocrystal-based trapping media. Nanocrystal-based memory devices indeed exhibit prominent electrical performance [21]- [26]; however, controlling the size and uniformity of nanocrystals is still a challenge that needs to be overcome. Ge 3 N 4 , which was formed by ammonia (NH 3 ) plasma nitridation of an amorphous Ge film in this study, has demonstrated great potential for advanced flash memory application in terms of a large memory window, highspeed operation as well as robust endurance and satisfactory retention.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

Lin

et al. 2013

IEEE Trans. Nanotechnology

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Due to a larger band offset and a higher permittivity compared to Si 3 N 4 , Ge 3 N 4 formed by NH 3 plasma nitridation of an amorphous Ge film was explored in this study as the chargetrapping layer for flash memory devices. As the nitridation time prolongs, memory window and operation speed are improved accordingly. The improvement is inferred to be the increased number of trapping sites and higher permittivity of the charge-trapping layer caused by the introduction of nitrogen atoms. The former is helpful in storing more charges while the latter offers a higher electric field over the tunnel oxide. Memory devices with 180-s NH 3 plasma nitridation hold great potential for advanced memory applications because they possess many promising characteristics such as a large hysteresis memory window, high operation speed, robust endurance performance up to 10 5 program/erase (P/E) cycles, and good retention characteristic with 15% charge loss after 10-year operation at 85 • C.

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Section: Introductionmentioning

confidence: 99%

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

Lin

et al. 2013

IEEE Trans. Nanotechnology

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“…In thin film technology, chemical vapour deposition (CVD) is one of the versatile methods for depositing ultrathin films and works by thermal decomposition of precursors in a reaction chamber [12]. It is widely used for technological applications and manufacturing of industrial devices and it is suitable for batch and semicontinuous operations [13].…”

Section: Introductionmentioning

confidence: 99%

Functional networks models for rapid characterization of thin films: An application to ultrathin polycrystalline silicon germanium films

Asafa

Adeniran

Olatunji

2015

Applied Soft Computing

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“…Many device applications were recently proposed (e.g., Si nanowire electrical interconnects [32,33], Si nanowire thermoelectric devices [34,35], Si nanowire sensors [36][37][38], SiGe cluster-based memory devices [39][40][41], SiGe cluster-based near-infrared light emitters [42][43][44][45][46], etc. ), and detailed understanding of thermal processes in these nanostructures is absolutely necessary.…”

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confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications

Cited by 27 publications

References 7 publications

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer

Functional networks models for rapid characterization of thin films: An application to ultrathin polycrystalline silicon germanium films

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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