Formula for average energy required to produce a secondary electron in an insulator

Based on the formula for the average energy required to produce an internal secondary electron (ε) in emitter, the energy band of insulator and the assumption that the maximum exit energy of secondary electron in insulator is reverse to the width of forbidden band, the formula for ε in insulator is deduced. On the basis of the formula for the number of internal secondary electrons produced in the direction of the velocity of primary electrons per unit path length, the energy band of insulator and the characteristic of secondary electron emission, the formula for the probability of secondary electrons passing over the surface barrier of insulator into the vacuum (B) is also deduced. According to some relationship between the parameters of secondary electron yield from insulator, the formula for the mean escape depth (1/α) is successfully deduced. The formulae for ε and 1/α are experimentally proven, respectively, and thereafter the formula for B is indirectly proven to be true by the experimental results. It is concluded that the formulae for ε, B and 1/α are universal to estimate ε, B and 1/α under the condition that primary electrons from 10 keV to 30 keV hit on an insulator, respectively.

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Maximum Secondary Electron Yields From Semiconductors and Insulators

Xie

Liu

Xia

et al. 2016

Surf. Rev. Lett.

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Based on the processes and characteristics of secondary electron emission and the formula for the yield due to primary electrons hitting on semiconductors and insulators, the universal formula for maximum yield [Formula: see text] due to primary electrons hitting on semiconductors and insulators was deduced, where [Formula: see text] is the maximum ratio of the number of secondary electrons produced by primary electrons to the number of primary electrons. On the basis of the formulae for primary range in different energy ranges of [Formula: see text], characteristics of secondary electron emission and the deduced universal formula for [Formula: see text], the formulae for [Formula: see text] in different energy ranges of [Formula: see text] were deduced, where [Formula: see text] is the primary incident energy at which secondary electron yields from semiconductors and insulators, [Formula: see text], are maximized to maximum secondary electron yields from semiconductors and insulators, [Formula: see text]; and [Formula: see text] is the maximum ratio of the number of total secondary electrons produced by primary electrons and backscattered electrons to the number of primary electrons. According to the deduced formulae for [Formula: see text], the relationship among [Formula: see text], [Formula: see text] and high-energy back-scattering coefficient [Formula: see text], the formulae for parameters of [Formula: see text] and the experimental data as well as the formulae for [Formula: see text] in different energy ranges of [Formula: see text] as a function of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, where [Formula: see text] and [Formula: see text] are the original electron affinity and the width of forbidden band, respectively. The scattering of [Formula: see text] was analyzed, and calculated [Formula: see text] values were compared with the values measured experimentally. It was concluded that the deduced formulae for [Formula: see text] were found to be universal for [Formula: see text].

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Formula for average energy required to produce a secondary electron in an insulator

Cited by 5 publications

References 40 publications

Formulae for secondary electron yield from insulators and semiconductors

Formulae for secondary electron yield from insulators and semiconductors

THE FORMULAE FOR PARAMETERS OF THE SECONDARY ELECTRON YIELD OF INSULATORS FROM 10 keV TO 30 keV

Maximum Secondary Electron Yields From Semiconductors and Insulators

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