Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field

On the extraction of threshold voltage, effective channel length and series resistance of MOSFETs

“…The most widely method to extract the total drain and source series resistance (R D + R S ) was presented independently by Terada and Muta [33] and by Chern et al [34] almost twenty years ago. Several other methods [52,[54][55][56][57][58][59] have been developed recently.…”