From active plasmonic devices to plasmonic molecular electronics

Lacroix, Jean; Quynh, Nguyen Van; Ai, Yong; Nguyen, Quang Trong; Martin, Pascal; Lacaze, P.C.

doi:10.1002/pi.5756

Cited by 18 publications

(14 citation statements)

References 107 publications

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“…These high-energy surface plasmon modes in Si could be of interest for optical field emitter arrays, [38] catalysis, [39] and active plasmonics. [40]…”

Section: Eels Analysis: Si Volume Plasmon Engineeringmentioning

confidence: 99%

Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Manfrinato

Camino

Stein

et al. 2019

Adv Funct Materials

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Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro‐optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si‐based devices of the smallest dimensions for novel device engineering is highly desirable. The work presented here uses aberration‐corrected electron‐beam lithography combined with dry reactive ion etching to achieve both: patterning of 1 nm features and surface and volume plasmon engineering in Si. The nanofabrication technique employed here produces nanowires with a line edge roughness (LER) of 1 nm (3σ). In addition, this work demonstrates tuning of the Si volume plasmon energy by 1.2 eV from the bulk value, which is one order of magnitude higher than previous attempts of volume plasmon engineering using lithographic methods.

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“…These high-energy surface plasmon modes in Si could be of interest for optical field emitter arrays, [38] catalysis, [39] and active plasmonics. [40]…”

Section: Eels Analysis: Si Volume Plasmon Engineeringmentioning

confidence: 99%

Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Manfrinato

Camino

Stein

et al. 2019

Adv Funct Materials

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“…We show that this molecule can be grafted onto an electrode and characterize the modified surfaces by various techniques: IR, Raman, X‐ray photoelectron (XPS) spectroscopies, AFM and electrochemistry. We show that on/off switching capabilities associated with oligo(thienopyrazine) materials are retained and that these oligomers can be also locally grafted onto gold nanoparticles by plasmon‐induced diazonium reduction [52] …”

Section: Introductionmentioning

confidence: 96%

“…We show that on/off switching capabilities associated with oligo(thienopyrazine) materials are retained and that these oligomers can be also locally grafted onto gold nanoparticles by plasmon-induced diazonium reduction. [52]…”

Section: Introductionmentioning

confidence: 99%

Electrochemical and Plasmon‐induced Grafting of n‐Dopable π‐Conjugated Oligomers

et al. 2021

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The functionalization of electrodes by the reduction of diazonium cations generated in situ from 4- (2,3-diethylthieno[3,4-b] pyrazine-5-yl)aniline has been investigated. The thienopyrazine unit of this molecule is a precursor of n-dopable π-conjugated oligomers. Electrochemical reduction of diazonium cation coats the electrode with organic layers. Raman, IR, and XPS analyses show that their composition corresponds to that of the starting monomer, while AFM scratching measurements indicate thicknesses below 10 nm. The electrochemical responses of various reversible redox couples on the modified electrodes show that the attached layer is insulating in the positive potential range but can be n-doped at negative potential and switches to a conductive state. Moreover, oligo(4- (2,3-diethylthieno[3,4-b] pyrazine-5-yl)phenyl) can be selectively grafted onto gold nanoparticles (AuNPs) by plasmon-induced diazonium reduction. A 10-20 nm-thick organic layer is easily grafted onto each gold nanoparticle by visible-light illumination in a few minutes without any reducing agent or molecular photocatalyst. This result is attributed to the transfer of hot electrons from the excited plasmonic NPs to the diazonium, confirms that localized surface plasmon resonance can induce nanolocalized electrochemical reactions, and contributes to the emerging field of "plasmonic electrochemistry".

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“…Advances in miniaturization technologies have attracted enormous interest due to their effectiveness in the fabrication of smaller, faster, and cost-effective devices. Various nanosized multifunctional surfaces have been manufactured for sensing systems [ 1 , 2 , 3 , 4 ], switching electronic devices [ 5 , 6 ], light-emitting systems [ 7 ] and energy storage devices [ 8 ]. Nanostructured surfaces are fabricated by using either top-down or bottom-up approaches.…”

Section: Introductionmentioning

confidence: 99%

Confinement Effect of Plasmon for the Fabrication of Interconnected AuNPs through the Reduction of Diazonium Salts

Nguyen

Pham

et al. 2021

Nanomaterials

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This paper describes a rapid bottom-up approach to selectively functionalize gold nanoparticles (AuNPs) on an indium tin oxide (ITO) substrate using the plasmon confinement effect. The plasmonic substrates based on a AuNP-free surfactant were fabricated by electrochemical deposition. Using this bottom-up technique, many sub-30 nm spatial gaps between the deposited AuNPs were randomly generated on the ITO substrate, which is difficult to obtain with a top-down approach (i.e., E-beam lithography) due to its fabrication limits. The 4-Aminodiphenyl (ADP) molecules were grafted directly onto the AuNPs through a plasmon-induced reduction of the 4-Aminodiphenyl diazonium salts (ADPD). The ADP organic layer preferentially grew in the narrow gaps between the many adjacent AuNPs to create interconnected AuNPs. This novel strategy opens up an efficient technique for the localized surface modification at the nanoscale over a macroscopic area, which is anticipated to be an advanced nanofabrication technique.

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From active plasmonic devices to plasmonic molecular electronics

Cited by 18 publications

References 107 publications

Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design

Electrochemical and Plasmon‐induced Grafting of n‐Dopable π‐Conjugated Oligomers

Confinement Effect of Plasmon for the Fabrication of Interconnected AuNPs through the Reduction of Diazonium Salts

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