The diffusion of an interstitial Si atom along an edge dislocation in Al is studied by using a quantummechanics/molecular-mechanics coupling method. It is found that the diffusing Si atom follows approximately a sinusoidal trajectory. The diffusion energy barrier along the partial dislocation core is in excellent agreement with the experimental value. We predict that the stacking fault ribbon could provide a fast pathway for diffusion which increases the diffusivity by 6-7 orders of magnitude comparing to the bulk value at 700 K. At the same temperature, the diffusivity along the stacking fault is found to be three to four orders of magnitude greater than that along the partial dislocation core. Dislocation core acts as fast paths for diffusing atoms whose mobility can be orders of magnitude higher than in bulk diffusion and this phenomenon is often referred as "pipe diffusion." By creating a short-circuit pathway, pipe diffusion can affect many kinetic processes in bulk materials, including creep, 1 dynamic-strain aging, 2 and crystallization. 3 In thin films and nanocrystals, pipe diffusion can become even more crucial due to the reduced material dimensions. For example, pipe diffusion can significantly influence oxidation, corrosion, recovery of radiation damage, and electromigration in nanoelectronic devices. 4 Despite its importance, an accurate determination of diffusivity and diffusing mechanism has remained challenging. On the experimental side, owing to the difficulty in tracking atomic motion, very few direct measurements have been reported 5,6 to date. Among them, a recent experiment on Si diffusing in Al stands out. 6 On the theoretical side, all atomistic simulations have been performed using empirical potentials. For example, the embedded-atom method ͑EAM͒ has been widely employed to study pipe diffusion in Al, 7 Cu, 8 and Al-Mg alloys. 9 However, generally speaking, empirical potentials are less accurate in dealing with phenomena involving bond breaking, bond formation, and charge transfer, etc., which are usually present at a dislocation core during pipe diffusion. Moreover, when multiple elements are involved, the empirical potentials such as EAM are even more prone to giving wrong results. On the other hand, although quantum-mechanical simulations are capable of capturing these phenomena, they are often too computationally expensive to deal with dislocations. To the best of our knowledge, there is no literature reporting quantum-mechanical study of pipe diffusion.Previous studies have shown that the quantum-mechanics ͑QM͒/molecular-mechanics ͑MM͒ method can accurately describe the structure of dislocations in Al. 10,11 Motivated by the recent experiment which has observed "giant diffusivity" of Si interstitial pipe diffusion in Al, 6 we have carried out corresponding QM/MM simulations for Si diffusions in an edge dislocation in Al. By combining computational efficiency and accuracy, the present QM/MM method links quantum-mechanical simulations based on the Kohn-Sham density-functional theory ͑K...