Front-End Process Technology for hp65/45 CMOS Devices

Abstract

In order to obtain high performance CMOS devices, introduction of new technologies into the front-end fabrication process are required and therefore so-called "technology boosters" such as strained channel, metal gate, high-k gate dielectrics, thin body SOI, and multi-gate transistor, are proposed so far. Among these technologies, gate stack technology is common key issue for scaled CMOS devices. In this proceeding, we will discuss on highk gate dielectrics and metal gate technology, and recent achievements of these technologies are reviewed.