Full Ka-band High Performance InP MMIC LNA Module

Abstract

-A 0.1-,Im InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 ± 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz. The LNA chip was cryogenically cooled to 12 K where it exhibited an associated gain of 23.0 ± 1.1 dB and an average noise temperature of 15.5 K, i.e. 0.23-dB noise figure. Two LNA chips were cascaded and assembled into a module. At room temperature, the module achieved an associated gain of 37.6 dB ± 1.8 dB and an average noise figure of 1.3 dB. At 15 K, the average noise temperature was improved to 11.4 K with 41.0 i 2.4 dB associated gain.

Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers

“…LNA 2 utilizes a three-stage InP HEMT MMIC. 17 LNA 3 is a commercial low noise MMIC LNA from the Low Noise Factory (Sweden). 18 LNA 4 19 exhibits both MIC and MMIC technologies since it comprises both an InP Cryo-3 HEMT 20 and a Faraday MMIC, with the HEMT placed discretely in front of the MMIC.…”

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

“…The uncertainty of the measured NF is about 0.2 dB, which is a typical value at the measured frequency. The average NF of the LNA is about 1.43 dB over the designed band and the NF has a minimum of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA . The gain and NF comparison between the GaAs LNA, InP LNA and the LNA in this work is given in Table .…”

Q-band low noise amplifiers using a 0.15μm MHEMT process for broadband communication and radio astronomy applications

“…For the 2 bypass networks of the dc supply, an in-band bypass capacitor, and two low frequency bypass capacitors with and without a small resistor are also included for the stability. The Q factor of bypass circuits can be reduced by the resistors to avoid unwanted resonances caused by parasitic inductance of the VIA holes and the MIM capacitors [16]. The low frequency oscillation can be further suppressed by the low frequency bypass capacitor with the resistor, since the maximum available gain of the device is very high in the low-frequency.…”