“…To further explore the response of TRISO SiC at relevant accident conditions and understand the transition from active to passive oxidation, this study investigates oxidation conditions between 1200 and 1600°C (1473–1873 K) with
of 0.2 kPa to expand on prior results
18 . Previous studies
19–21 conducted on the oxidation of SiC layer in TRISO particles in oxygen have been carried out at higher
, which might be away from reality as the presence of large amounts of matrix graphite materials consumes significant quantities of oxidants via oxidation
22–24 …”