Fully nonlinear photocarrier radiometry / modulated photoluminescence dynamics in semiconductors: Theory and applications to quantitative deconvolution of multiplexed photocarrier density wave interference and recombination processes

Sun, Qiming; Melnikov, Alexander; Mandelis, Andreas; Song, Yaqin

doi:10.1016/j.jlumin.2021.118075

Cited by 4 publications

(1 citation statement)

References 47 publications

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“…A newly developed method in MPL techniques is based on the simultaneous use of two modulating frequencies, to make heterodyne detection and observe non-linearities in high injection rate. In [11] and [12], the authors develop some analytical model to be able to interpret the results by computing the different parameters of the recombination paths. In our experiment and analysis, we use only one excitation frequency and a large modulation depth (more than 50%) and frequencies up to 100 MHz.…”

Section: Introductionmentioning

confidence: 99%

Analytical model of the modulated photoluminescence in semiconductor materials

Moron¹,

Bérenguier²,

Alvarez³

et al. 2021

J. Phys. D: Appl. Phys.

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Modulated photoluminescence (MPL) is an optoelectronic characterization technique of semiconductor materials. Going to high frequencies enables one to characterize fast phenomena, and so materials with a short lifetime such as chalcogenides or III–V absorbers. Some typical signatures have already been experimentally observed. However, physical mechanisms and quantitative analyses are not well understood yet. Here, using both an analytical approach and a full numerical modeling, we study how the energy position of a defect level, its electron and hole capture cross sections, its density, influence the frequency dependence of the MPL phase. We show that quantitative information can be extracted. We also study the effect of additional surface recombination, and of non homogeneities created by carrier generation profiles or asymmetric top surface and bottom surface recombination velocities, where diffusion of the carriers plays a role and can be limiting at high frequency. Finally we apply our model to an experimental result to extract defect parameters of the sample. Our analysis highlights the usefulness of MPL and the importance of having a proper modeling of the experiment.

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Section: Introductionmentioning

confidence: 99%

Analytical model of the modulated photoluminescence in semiconductor materials

Moron¹,

Bérenguier²,

Alvarez³

et al. 2021

J. Phys. D: Appl. Phys.

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Photon and vibration synergism on planar defects induced 2D-graphitic carbon nitride for ultrafast remediation of dyes and antibiotic ampicillin

et al. 2022

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Lock-in carrierography of semiconductors and optoelectronics

Sun

Zhao

Wang

2022

Journal of Applied Physics

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Lock-in carrierography (LIC), a recently emerging camera-based imaging technique, is proving to be very promising for noncontact and quantitative characterization of electrical/electronic properties of semiconductor and optoelectronic materials/devices at different stages of research, fabrication, and manufacturing. This tutorial is devoted to LIC and it contains four sections. First, the background of the terminology, the needs from the electronics industry, and the research progress of LIC are briefly introduced. Section II is regarding homodyne LIC, including the relevant basics (semiconductor and photoluminescence physics, digital lock-in imaging strategy, experimental configuration, etc.) and its applications to carrier effective lifetime imaging, resistivity imaging, and Si solar cell electrical characterization, while Sec. III is for heterodyne LIC, including the relevant basics (high-frequency carrier density waves, heterodyne photoluminescence signal generation mechanisms, nonlinear carrier recombination dynamics, etc.) and its applications to surface recombination velocity imaging, carrier trapping dynamic parameters imaging, and quantum-dot solar cell characterization. Comments and advice on the future study of LIC are given in the Outlook section.

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Fully nonlinear photocarrier radiometry / modulated photoluminescence dynamics in semiconductors: Theory and applications to quantitative deconvolution of multiplexed photocarrier density wave interference and recombination processes

Cited by 4 publications

References 47 publications

Analytical model of the modulated photoluminescence in semiconductor materials

Analytical model of the modulated photoluminescence in semiconductor materials

Photon and vibration synergism on planar defects induced 2D-graphitic carbon nitride for ultrafast remediation of dyes and antibiotic ampicillin

Lock-in carrierography of semiconductors and optoelectronics

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