Fundamental Aspects of Silicon Carbide Oxidation

Watanabe, Heiji; Hosoi, Takuji

doi:10.5772/51514

Cited by 18 publications

(24 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in Figure 2a, compared with sapphire substrate, C1s peaks appear in the XPS spectra of SiG and PG films, which correspond to the carbon atoms of graphene. [26][27][28] More significantly, other Si components cannot be detected, such as Si-O at around 103~105 eV reported in Ref. One can observer that the Si2p peak appears in the XPS spectrum of SiG film, which indicates that silicon atoms are incorporated into graphene.…”

Section: Resultsmentioning

confidence: 90%

Synthesis, characterization and electrical properties of silicon-doped graphene films

Wang

Chen

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

ARTICLE This journal isTheoretical calculations have predicted that silicon doping can modifies the electronic structure of graphene; however, it is difficult to synthesize high -quality silicon doped graphene (SiG), thus the electrical properties of SiG have still remained unexplored. In this study, monolayer SiG film was synthesized by chemical vapour deposition using triphenylsilane (C 18 H 15 Si) as the sole solid source, which provides both carbon and silicon atoms. The silicon doping content is ~ 2.63 at%, and silicon atoms are incorporated into graphene lattice with pure Si-C bonds. Furthermore, electrical studies reveal that the as-synthesized SiG film shows a typical p-type doping behaviour with a considerably high carrier mobility of about 660 cm 2 /Vs at room temperature. In addition, due to the single doping structure of Si-C bonds, the SiG film can be expected to be used as an excellent platform for studying silicon doping effects on the physical and chemical properties of graphene.

show abstract

Section: Resultsmentioning

confidence: 90%

Synthesis, characterization and electrical properties of silicon-doped graphene films

Wang

Chen

et al. 2015

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

“…Although oxidation data for Hi‐Nicalon™‐S SiC fiber is limited, extensive data on SiC oxidation exists and is reviewed elsewhere . A wide range of oxidation rates are reported.…”

Section: Introductionmentioning

confidence: 99%

“…Although oxidation data for Hi-Nicalon TM -S SiC fiber is limited, extensive data on SiC oxidation exists and is reviewed elsewhere. [26][27][28] A wide range of oxidation rates are reported. Oxidation is affected by impurities that change diffusion rates, scale viscosities, and scale crystallization temperatures.…”

Section: Introductionmentioning

confidence: 99%

Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air

2017

View full text Add to dashboard Cite

Hi‐Nicalon™‐S SiC fiber strengths and Weibull moduli were measured after oxidation for up to 100 hours between 700°C and 1400°C in wet and dry air. SiO2 scale thickness and crystallization extent were measured by TEM. The effect of furnace environment on trace element levels in the SiO2 scales was characterized by secondary ion mass spectroscopy. Crystallization kinetics and Deal‐Grove oxidation kinetics for glass and crystalline scale, and the transition between them, were modeled and determined. Crystallization retards oxidation kinetics, and scale that formed in the crystalline state was heavily deformed by the growth stress accompanying SiC oxidation volume expansion. Glass scales formed in dry air slightly increased fiber strength. Glass scales formed in wet air did not increase strength, and in some cases significantly decreased strength. Scales more than 200 nm thick were usually partially or completely crystallized, which degraded fiber strength. Contamination of scales by trace impurities such as Al and Ca during heat treatment inhibited crystallization. The oxidation kinetics and the strengths of oxidized Hi‐Nicalon™‐S fibers are compared with previous studies on SiC fibers, bulk SiC, and single‐crystal SiC. Empirical relationships between oxidation temperature, time, scale thickness, and strength are determined and discussed.

show abstract

“…There are several recent reviews of the extensive SiC oxidation literature . Unfortunately, crystallization of the glass scales that form during SiC oxidation and the attendant effects on oxidation kinetics are not extensively addressed .…”

Section: Introductionmentioning

confidence: 99%

“…There are several recent reviews of the extensive SiC oxidation literature. [16][17][18][19] Unfortunately, crystallization of the glass scales that form during SiC oxidation and the attendant effects on oxidation kinetics are not extensively addressed. 14,20,21 Crystallization of glass SiO 2 scales reduces oxygen permeability during dry-air oxidation, 14,18,20,22,23 and complicates the determination of kinetics parameters.…”

Section: Introductionmentioning

confidence: 99%

Passive oxidation kinetics for glass and cristobalite formation on Hi‐Nicalon™‐S SiC fibers in steam

Hay

Corns

2018

J Am Ceram Soc

View full text Add to dashboard Cite

Parabolic rate constants for SiO2 glass (BG) and cristobalite (BC) scale formation during passive oxidation of SiC in steam were determined. Cristobalite scale that originally formed as glass and as scale that formed afterward, directly as cristobalite, was distinguished by TEM. A method to determine BG and BC from many thickness measurements of the 2 different scale layers was developed. The method was applied to Hi‐Nicalon™‐S SiC fiber oxidation in Si(OH)4 saturated steam between 500 and 1600°C. At 1500°C and lower temperatures, glass scale formed more rapidly than cristobalite scale. BG and BC had activation energies of 80 ± 5 kJ/mol and 95 ± 5 kJ/mol, respectively. At 1600°C, cristobalite scales formed much faster than glass scales. Many scales spheroidized after oxidation at temperatures beneath 1000°C, and continuous scales that did form had wide variation in thickness. This made kinetics analysis after low temperature steam oxidation problematic.

show abstract

Fundamental Aspects of Silicon Carbide Oxidation

Cited by 18 publications

References 30 publications

Synthesis, characterization and electrical properties of silicon-doped graphene films

Synthesis, characterization and electrical properties of silicon-doped graphene films

Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air

Passive oxidation kinetics for glass and cristobalite formation on Hi‐Nicalon™‐S SiC fibers in steam

Contact Info

Product

Resources

About

Fundamental Aspects of Silicon Carbide Oxidation

Cited by 18 publications

References 30 publications

Synthesis, characterization and electrical properties of silicon-doped graphene films

Synthesis, characterization and electrical properties of silicon-doped graphene films

Oxidation kinetics strength of Hi‐NicalonTM‐S SiC fiber after oxidation in dry and wet air

Passive oxidation kinetics for glass and cristobalite formation on Hi‐Nicalon™‐S SiC fibers in steam

Contact Info

Product

Resources

About

Oxidation kinetics strength of Hi‐Nicalon^TM‐S SiC fiber after oxidation in dry and wet air