Fundamentals, present status and future perspective of TOPCon solar cells: A comprehensive review

Recent advancements in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

“…The advantages of this technique include the simple processing and equipment requirements, and it can be accomplished using only a diffusion furnace with laser doping equipment and cleaning equipment. 193 High-temperature annealing is usually required for the preparation of TOPCon structures to realize crystallization and to activate doping. However, annealing in a high-temperature furnace can cause a number of issues: rst, the deterioration of the tunnel oxide and its interfaces; second, increased Auger recombination due to dopant diffusion from poly-Si into the base; third, insufficient dopant activation in poly-Si; and, nally, shortened absorber lifetimes as a result of prolonged high-temperature exposure.…”

“…The advantages of this technique include the simple processing and equipment requirements, and it can be accomplished using only a diffusion furnace with laser doping equipment and cleaning equipment. 193…”

Exploration of Phosphorus Oxide in Heavily Phosphorus-Doped Polysilicon Films of Tunneling Oxide Passivation Contact Solar Cells

“…Next, a mask layer was prepared on i-a-Si for a cover; (4) removing the winding i-a-Si layer formed in the LPCVD process at the front of substrate; (5) p + -type dopant was performed through thermal diffusion of B elements into the front of n-Si by the BBr 3 source. Subsequently, the annealing process at 900 °C for 60 min was executed, and the i-a-Si film was transformed to the polycrystalline poly-Si (n + ) structure; (6) BSG (borosilicate glass) at the top of the device was taken off with the mask layer at the back; (7) the passivation layers for both 70 nm AlO x /SiN x at the front and 30 nm SiN x at rear of the device were fabricated, respectively; (8) Ag electrodes were screen printed by silver paste at both sides of the device and then sintered at the temperature of 800 °C.…”

“…5 TOPCon solar cell may become one of the mainstream of c-Si-based PV industrial products in the future market. 6,7 For the n-type TOPCon device, the effective doping of P elements incorporated into the crystallites of the poly-Si (n + ) film and activated by the loss of an extra valence electron lets the charged P + ion play a field passivation effect to decrease carrier's recombination at the interfaces of n-Si/SiO x /poly-Si (n + ). The overlying of the poly-Si (n + ) layer on the n-Si/SiO x structure to achieve electron selective transport is based on the energy band off at the heterojunction.…”

Short Drying Processes for Silicon Solar Cells

“…A general aim of the photovoltaic (PV) industry is to reduce process times to decrease the cycle time of a solar cell and increase the throughput. [1] This work focuses on reducing the process time of the contact drying step [2][3][4] (t DRY ) for high-temperature solar cell devices like passivated emitter and rear cells (PERC) [5][6][7] and tunnel oxide passivated contact (TOPCon) cells [8][9][10][11][12][13] while maintaining the level of the solar cell performance. The drying process is required after the screen-printing of metal pastes (electrodes) on the solar wafer substrate.…”