Further improvements in decoupled methods for semiconductor device modeling

Obrecht, M.S.; Heasell, E.L.; Elmasry, M.I.; Wu, Kechih; Dutton, R.W.

doi:10.1109/nupad.1994.343474

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…As operating current increases, DM and PDM use increasing CPU time to solve. There is room for speeding up the convergence of decoupled method [6,7]. It is difficult to decide which method is superior.…”

Section: Mixed Level Simulation With Pdm and CMmentioning

confidence: 99%

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Dai

Chang

Lee

et al. 2004

Int J Numerical Modelling

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SUMMARYIn this paper, we study the decoupled method which requires less memory on semiconductor device simulation. The decoupled method decouples the three equivalent circuits of semiconductor and solves them sequentially. The three equivalent circuits are formed by formulating the three partial differential equations that describe the electrical behaviour of semiconductor. Since the decoupled method solves one equation in each stage, the decoupled method uses one-ninth memory space of the coupled method. When decoupling the three equivalent circuits, the decoupled method yields a boundary condition limitation. In order to overcome the limitation, we propose a compromising partial decoupled method which has complete boundary condition and requires four-ninth memory space of the coupled method. The three methods are compared for computational efficiency and accuracy in the simulation of BJT. The simulation results are identical.

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Section: Mixed Level Simulation With Pdm and CMmentioning

confidence: 99%