Further increase of the critical current density of MgB<sub>2</sub>tapes with nanocarbon-doped mechanically alloyed precursor

Häßler, Wolfgang; Herrmann, M.; Rodig, C; Schubert, M.; Nenkov, K.; Holzäpfel, B.

doi:10.1088/0953-2048/21/6/062001

Cited by 77 publications

(60 citation statements)

References 12 publications

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“…The transport critical current (I c ) of the MgB 2 wires was measured with the four-probe resistive method at 4.2 K up to 150 A in a perpendicular magnetic field at the International Laboratory of High Magnetic Fields and Low Temperatures in Wrocław [17,18]. Transport critical current measurements at 20 K were conducted at the Institute for Solid State and Materials Research Dresden [19]. The I c was determined on the basis of 1 μV/cm criterion.…”

Section: Preparation Of Samplesmentioning

confidence: 99%

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Gajda¹,

Morawski²,

Zaleski³

et al. 2016

J Material Sci Eng

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In this paper we present results of transport critical current density (J c ) at 20 K and 4.2 K, irreversible magnetic field (B irr ), upper critical field (B c2 ), critical temperature (T c ), pinning force (F p ), scanning pinning force scaling results (F p /F pmax and B/B irr ) and electron microscope (SEM) images of un-doped MgB 2 wires of 0.63 mm diameter. All wires were annealed at pressures ranging from 0.1 MPa to 1 GPa for 15 min between 680°C to 740°C. SEM images show that 1 GPa pressure yields small grains, higher MgB 2 material density, and small voids. The results obtained by a physical properties measurement system (PPMS) show that high pressure (1 GPa) and 700°C annealing slightly decreases T c above 27 K and increases T c and B irr below 25 K. Un-doped MgB 2 wire annealed in 1 GPa for 15 min at 680°C at has a 20 K, 4.5 T J c of 100 A/mm 2 in and a B irr of 7 T. At 4.2 K, this wire has J c of 100 A/mm 2 at 10.5 T. Scaling results show that the dominant pinning mechanism is point pinning for undoped MgB 2 wires under 1 GPa pressure and annealed at 680°C (at 20 K).

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Section: Preparation Of Samplesmentioning

confidence: 99%

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Gajda¹,

Morawski²,

Zaleski³

et al. 2016

J Material Sci Eng

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“…I hope that further research and development with the aim of meeting the above requirements in addition to J c improvement will lead to the practical applications of superconducting wires in future. 17) a Mg-diffusion-processed MgB 2 wire, 18) a PLD-processed MgB 2 thin film, 19) a Nb-Ti wire, and a Nb 3 Sn wire are also shown. …”

Section: Discussionmentioning

confidence: 99%

Development and Prospects for the Future of Superconducting Wires

Kumakura

2011

Jpn. J. Appl. Phys.

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Superconducting wires are important from the viewpoints of energy saving and the realization of a low-carbon society, because their applications in various types of electric power applications enable not only improved efficiency but also the reduction of size and weight owing to the fact that they can allow a large electric current density without resistance. Wires of Nb-Ti and Nb 3 Sn metallic superconductors have conventionally been used in various magnets. The research and development of high-temperature Cu-oxide superconducting wires has been intensively carried out focusing on Bi-and Y-based oxides; recently, the development of long wires of these oxides has also been in progress, and their applications to a variety of power systems are being eagerly discussed. MgB 2 , whose superconductivity was discovered in Japan in 2001, is also being studied with the aim of fabricating MgB 2 wires, and promising performance has been obtained. The research and development of superconducting wires using these materials is expected to achieve further progress and lead to their practical applications in the future.

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“…Haßler et al [33] have reported the highest J c (10 4 A/cm 2 at 16.4 T and 4.2 K) at high magnetic fields by high-energy ball milling technique with nanocarbon alloying. This excellent performance can be attributed to the nanocrystalline grain size with a high amount of grain boundaries, and the effectivity of carbon substitution by mechanical alloying [34,35].…”

Section: Carbon Dopingmentioning

confidence: 99%

Development of Doped ${\rm MgB}_{2}$ Wires and Tapes for Practical Applications

Gao

Wang

et al. 2010

IEEE Trans. Appl. Supercond.

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Abstract-A review of current developments in the study of chemical doping effect on the superconducting properties of MgB 2 wires and tapes is presented, based on the known literature data and our own results. The critical current density of MgB 2 can be improved through various kinds of dopants. Among these dopants, doping with carbon-containing materials seems to be the most effective way to improve the J c performance. The doping effect of carbon in different forms and carbon-based compounds such as SiC, nano-C, metal carbides, as well as aromatic hydrocarbon and carbohydrate on the J c -B characteristics of MgB 2 was discussed in detail. The C can be incorporated into the MgB 2 crystal lattice by replacing boron, and thus BB c2 is significantly enhanced due to selective tuning of impurity scattering of the π and σ bands in the two-band MgB 2 . Besides the efforts of increasing B c2 B by carbon doping, the fine grain size and nano-size inclusions caused by doping would create many flux pinning centres improving the J c -B property of MgB 2 . Based on these considerations, we suggested some principles for the selection of dopants.

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Further increase of the critical current density of MgB₂tapes with nanocarbon-doped mechanically alloyed precursor

Cited by 77 publications

References 12 publications

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Development and Prospects for the Future of Superconducting Wires

Development of Doped ${\rm MgB}_{2}$ Wires and Tapes for Practical Applications

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Further increase of the critical current density of MgB2tapes with nanocarbon-doped mechanically alloyed precursor

Cited by 77 publications

References 12 publications

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Evidence of Point Pinning Centers in Un-Doped Mgb2 Wires at 20 K after HIP Process

Development and Prospects for the Future of Superconducting Wires

Development of Doped ${\rm MgB}_{2}$ Wires and Tapes for Practical Applications

Contact Info

Product

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Further increase of the critical current density of MgB₂tapes with nanocarbon-doped mechanically alloyed precursor