GaAs digital integrated circuits-a review from silicon point of view for designing ultra-fast VLSI circuits

Srivastava, Ashok; Dubey, Madan

doi:10.1109/mwscas.1989.102083

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…Although lOOk gate array and 5Ok standard cells have already been commercially availablel21, the integration level is still far lower than that of CMOS technology. The present limitation of integration level is still mainly caused by low yield, though it is anticipatcd that thermal management problems will overwhelm it in due course [3].…”

Section: Level Of Integrationmentioning

confidence: 99%

F-RISC/I: fast reduced instruction set computer with GaAs (H) MESFET implementation

Tien

Poon

Greub

et al.

[1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors

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F-RISCII is U monolithic GaAs microprocessor with a 7 stuge pipeline implemented with SBFL standard cells. It is targeted at a clock rate of 4OOMHz with a CPI of 1.45. A reduced version, F-RISCIDr, will be fabricated in July 1991. It is upwurdly compatible with F-RISCII. The impacts of GaAs technology on system urchitecture, CPU archilecture, circuit level optimization, implementation, performance, und testing of F-RISCII are discussed.

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Section: Level Of Integrationmentioning

confidence: 99%

F-RISC/I: fast reduced instruction set computer with GaAs (H) MESFET implementation

Tien

Poon

Greub

et al.

[1991 Proceedings] IEEE International Conference on Computer Design: VLSI in Computers and Processors

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The Roadmap of 2D Materials and Devices Toward Chips

Liu,

Zhang,

Liu

et al. 2024

Nano-Micro Lett.

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Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore’s law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.

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Compensation-circuit to improve radiation-hardness in GaAs digital-circuits, based on X-ray studies

Srivastava

Ganeshan

1999

IEEE Trans. Rel.

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GaAs digital integrated circuits-a review from silicon point of view for designing ultra-fast VLSI circuits

Cited by 3 publications

References 13 publications

F-RISC/I: fast reduced instruction set computer with GaAs (H) MESFET implementation

F-RISC/I: fast reduced instruction set computer with GaAs (H) MESFET implementation

The Roadmap of 2D Materials and Devices Toward Chips

Compensation-circuit to improve radiation-hardness in GaAs digital-circuits, based on X-ray studies

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