GaAs Solid State Broadband Power Amplifier for L and S Bands Applications

Abstract

This chapter provides an insight view of the Broadband Power Amplifier (BPA) design. Basically, the aim of the BPA is to increase the power level of the signal presents at its input terminal up to a prefixed power level at its output terminal in the operating frequency band. The research of a GaAs single stage solid state broadband power amplifier based of ATF13876 which operates in the frequency band ranging from 1.17 GHz to 3 GHz is presented in this chapter. The wider bandwidth circuits are designed by using transmission lines which are intrinsically wideband circuits. With carefully designed biasing and broadband matching networks, unconditionally stability and excellent matching performance are fulfilled over the overall operating bandwidth with a maximum power gain of 17.34 dB and a saturated output power of 17 dBm. Considering the wider bandwidth of the proposed BPA, the latter compares favorably with the contemporary state-of-the-art.

A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology

“…Each transistor is biased at the operation point (VDS=2.2 V, VGS -0.6 V) and the three inductors Ld1, Ld2 and Lg equals respectively to 0.15 nH, 0.15 nH and 0.1 nH. The performance of the circuit strongly depends on the bias conditions [20], for this reason the values of the bias voltages and inductors are chosen carefully. The resonant circuit of the VCO is based on two source-drain shorted transistors pHEMT 3 and pHEMT 4.…”