Gain spectra and current-induced phase-shift in blue laser diodes

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

“…On one side, a low resistivity of the p-AlGaN layer has been achieved by suppressing the compensation effect of C-related residual donors and coordinately controlling the concentrations of Mg-dopant and hydrogen impurity [14−16] . On the other side, it should be noted that an excellent p-GaN Ohmic contact with a low specific contact resistance is achieved by introducing carbon-related deep-level defects into the p-type contact interface region to enhance the transport capability of hole carriers [6,17,18] .…”

“…GaN-based blue LDs with a high optical power output in the watt class is highly required and essential, especially for laser display, laser lighting, laser welding and underwater communication. However, the fabrication of GaN-based blue LDs with high optical power is challenging in epitaxial growth, device manufacture and packaging processes [5,6] . Only a few groups reported the watt-class GaN-based blue LDs under continuous-wave (CW) operation.…”