Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology

Petti, Luisa; Loghin, F.; Cantarella, Giuseppe; Vogt, Christian; Münzenrieder, Niko; Abdellah, Alaa; Becherer, Markus; Haeberle, Tobias; Daus, Alwin; Salvatore, Giovanni A.; Tröster, Gerhard; Lugli, Paolo

doi:10.1109/led.2017.2748596

Cited by 15 publications

(17 citation statements)

References 26 publications

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“…In [17], the electron mobility reported was close to 10 cm 2 /Vs for zinc oxynitride TFTs deposited at 50 ºC and annealed at 350 ºC. Moreover, the electron mobility extracted in the flexible Zn 3 N 2 TFTs is similar to that reported in oxide-based flexible TFTs [18,19] and better than pentacene flexible TFTs [20]. Also, the results obtained are better than those reported in our previous Zn 3 N 2 TFTs on silicon wafers [8].…”

Section: Resultssupporting

confidence: 72%

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Dominguez

Pau

Redondo-Cubero

2018

IEEE Trans. Electron Devices

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In this work, Zinc Nitride (Zn3N2) based flexible thin film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio-frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn3N2 TFTs were characterized while bent to 5 mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm 2 /Vs and an on/off current ratio close to 10 5 after several cycles of bending and being exposed to air ambient for 30 days.

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Section: Resultssupporting

confidence: 72%

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Dominguez

Pau

Redondo-Cubero

2018

IEEE Trans. Electron Devices

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“…Front-end signal amplification increases the SNR and enables the detection of small electric signals. For this purpose, voltage [44,205,540,[577][578][579][580][581][582], transimpedance [583], differential [23], and buffer amplifiers on flexible substrates have been reported [217,222]. Figure 15a shows an on-site conditioned flexible magnetic sensor consisting of a differential GMR in a Wheatstone configuration, a fully flexible a-IGZO differential amplifier with a common mode rejection ratio (CMRR) of 44 dB and SNR of 56 dB.…”

Section: Circuitsmentioning

confidence: 99%

Flexible Sensors—From Materials to Applications

et al. 2019

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Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.

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“…Significant breakthroughs are, nevertheless, achieved with a steady pace. Petti and coworkers recently reported a flexible full-CMOS amplifier, with a gain bandwidth product of 60 kHz, realized with sputtered IGZO and spray-deposited CNTs as n-type and p-type semiconductors, respectively [47]. The structure and characteristics of these devices are presented in Figure 14.…”

Section: Flexible Electronicsmentioning

confidence: 99%

Technological Integration in Printed Electronics

Rivadeneyra¹,

Loghin²,

Falco³

2018

Flexible Electronics

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Conventional electronics requires the use of numerous deposition techniques (e.g. chemical vapor deposition, physical vapor deposition, and photolithography) with demanding conditions like ultra-high vacuum, elevated temperature and clean room facilities. In the last decades, printed electronics (PE) has proved the use of standard printing techniques to develop electronic devices with new features such as, large area fabrication, mechanical flexibility, environmental friendliness and-potentially-cost effectiveness. This kind of devices is especially interesting for the popular concept of the Internet of Things (IoT), in which the number of employed electronic devices increases massively. Because of this trend, the cost and environmental impact are gradually becoming a substantial issue. One of the main technological barriers to overcome for PE to be a real competitor in this context, however, is the integration of these non-conventional techniques between each other and the embedding of these devices in standard electronics. This chapter summarizes the advances made in this direction, focusing on the use of different techniques in one process flow and the integration of printed electronics with conventional systems.

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Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology

Cited by 15 publications

References 26 publications

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Flexible Zinc Nitride Thin-Film Transistors Using Spin-On Glass as Gate Insulator

Flexible Sensors—From Materials to Applications

Technological Integration in Printed Electronics

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