Gallium-nitride microwave Doherty power amplifier with 40 W PEP and 68% PAE

Cho, K.J.; Kim, W.J.; Stapleton, S.P.; Kim, J.H.; Lee, B.; Choi, Jin Joo; Kim, J.Y.

doi:10.1049/el:20061004

Cited by 13 publications

(4 citation statements)

References 3 publications

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“…From (4)- (7), we can adjust the indi-vidual load impedances of the carrier and peaking amplifiers for better IM3 cancellation, in addition to the bias adjustment. From (6), the optimized Z L,C and Z L,P can further compensate for the mismatch in k C and k P that are from the matching and combiner networks. Figure 2 shows a schematic diagram of the proposed Doherty amplifier.…”

Section: Im3 Cancellation Analysismentioning

confidence: 99%

A load network for Doherty amplifiers using an optimized impedance transformer

Jung

Lim

Park

et al. 2009

Micro & Optical Tech Letters

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Section: Im3 Cancellation Analysismentioning

confidence: 99%

A load network for Doherty amplifiers using an optimized impedance transformer

Jung

Lim

Park

et al. 2009

Micro & Optical Tech Letters

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“…In fact, this offset line can also be used to improve the linearity of the power amplifier. Because inherently in load modulation scheme, linearity of power amplifier can be improved if the third harmonics (gm 3 ) generated by the two amplifiers are 180˚ out of phase [13][14]. Although the magnitudes of the gm 3 are predefined by the bias points, their phase can be controlled by the offset line.…”

Section: Circuit Designmentioning

confidence: 99%

Efficiency Enhancement of Harmonic-Tuned GaN Power Amplifier Using Doherty like Load Modulation

Xiao

Schreurs

Angelov

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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In this paper, the Doherty like load modulation has been implemented in second-harmonic-tuned gallium nitride (GaN) power amplifiers (PAs) to further improve their performance. Both harmonic tuning and load modulation are based on an accurate large-signal model extracted for the GaN devices. Two devices of identical size are used. In previous research works, the use of load modulation on two identical size devices always results in decreases in output power, gain, or even linearity, although improvements in efficiency are shown. Besides that, the influence of the offset line on linearity is not covered. In this experiment, by optimizing the load modulation and properly designing the offset line, a power added efficiency (PAE) of 65%, a linear gain of 16 dB, and an output power of 40.5 dBm have been achieved at 2 GHz. Compared with those of a balanced power amplifier, the load modulated PA shows superior power performance both in efficiency (more than 10% improvement in PAE) and in linearity. Moreover, its output power and gain maintain as high as that of the balanced PA.Index Terms-GaN, high efficiency, Doherty, load modulation, harmonic tuning 978-1-4244-1940-1/08/$25.00 ©2008 IEEE

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“…Its applications include personal communication systems (PCSs) at 1.9 GHz, wideband code division multiple access (WCDMA) at 2 to 2.1 GHz, and worldwide interoperability for microwave access (Wi-MAX) at 2.3 to 2.5 GHz [1][2][3][4][5]. A single GaN power amplifier (PA) covering two or three bands has been reported in [6,7]. However, in these papers, practical aspects such as PA performance degradation because of surface mount assembly and matching network design methodology were not discussed in detail.…”

Section: Introductionmentioning

confidence: 99%