Gamma-Induced Degradation Effect of InP HBTs Studied by Keysight Model

Zhang, Jincan; Cao, Lei; Liu, Min; Liu, Bo; Cheng, Lin

doi:10.1080/00295639.2020.1798679

Cited by 4 publications

(4 citation statements)

References 26 publications

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“…As shown in Figure 8, the CBE increases after irradiation and then decreases slightly after annealing, while the CBC is hardly affected by proton irradiation. This differs from the capacitance behaviour of InP HBT under gamma irradiation, as reported in Reference [22], where both CBE and CBC show an increase. As shown in Table 3, the intrinsic and extrinsic collector resistances R CI and R CX show the most significant changes compared to the other resistances with rates of 4.78% and 25.77%, respectively.…”

Section: Capacitance Characteristicscontrasting

confidence: 96%

“…As shown in Figure 8, the C BE increases after irradiation and then decreases slightly after annealing, while the C BC is hardly affected by proton irradiation. This differs from the capacitance behaviour of InP HBT under gamma irradiation, as reported in Reference [22], where both C BE and C BC show an increase. In the compact model, the equations for the junction capacitances can be found in the Reference [28].…”

Section: Capacitance Characteristicscontrasting

confidence: 96%

“…The q 3mod is an empirical parameter used to model a potential rise in the base current caused by the soft-knee effect. Since this phenomenon is not observed in the measured InP HBTs, the GKDC parameter is set to its default value of 0 [22]. The model parameters of forward Gummel characteristics are extracted and presented in Table 1.…”

Section: Forward-mode Gummel Characteristicsmentioning

confidence: 99%

“…Van Uffelen M et al studied the direct current (DC) characteristics of SiGe HBTs at gamma doses of up to 4 MGy using the SPICE model [19]. Zhang J C et al investigated the impact of gamma irradiation on the DC and alternating current (AC) characteristics of gallium arsenide (GaAs) and InP hetero-junction bipolar transistors with the VBIC and Keysight models [20][21][22]. Thus, the relevant literature mainly focuses on model parameter analysis of gamma irradiation for Si BJTs, GaAs HBTs, SiGe HBTs and InP HBTs, while lacking the model parameter analysis of proton irradiation.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Zhao,

Wang,

Zhang

et al. 2024

Electronics

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The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (ISE) and ideality factor in the ideal region (NE) in the forward Gummel characteristics, the zero-biased capacitance (Cje) and the grading factor (Mjer) in the BE junction capacitance, and the transit time parameter in the base region (Tfb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.

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Section: Capacitance Characteristicscontrasting

confidence: 96%

“…As shown in Figure 8, the C BE increases after irradiation and then decreases slightly after annealing, while the C BC is hardly affected by proton irradiation. This differs from the capacitance behaviour of InP HBT under gamma irradiation, as reported in Reference [22], where both C BE and C BC show an increase. In the compact model, the equations for the junction capacitances can be found in the Reference [28].…”

Section: Capacitance Characteristicscontrasting

confidence: 96%

Section: Forward-mode Gummel Characteristicsmentioning

confidence: 99%