GaN-based photonic crystal surface emitting lasers with central defects

Wu, Tzeng Tsong; Weng, Peng Hsiang; Hou, Yen Ju; Lu, Tien−Chang

doi:10.1063/1.3665251

Cited by 10 publications

(6 citation statements)

References 14 publications

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“…[8][9][10][11][12][13][14] The simple geometry of membrane HCG high-Q resonators can be applied for realizing SELs. However, it is still challenge to fabricate GaN-based membrane HCG structures due to the immature etching process to fabricate realized at room temperature by optical pumping.…”

Section: Introductionmentioning

confidence: 99%

Fano resonances GaN-based high contrast grating surface-emitting lasers

et al. 2013

SPIE Proceedings

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GaN-based high contrast grating surface-emitting lasers (HCG SELs) with AlN/GaN distributed Bragg reflectors were reported. The device exhibited a low threshold pumping energy density of about 0.56 mJ/cm 2 and the lasing wavelength was at 393.6 nm with a high degree of polarization of 73% at room temperature. The specific lasing mode and polarization characteristics agreed well with the theoretical modeling. The low threshold characteristics of our GaNbased HCG SELs utilized by the Fano resonance can be potential for development of blue surface emitting laser sources

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Section: Introductionmentioning

confidence: 99%

Fano resonances GaN-based high contrast grating surface-emitting lasers

et al. 2013

SPIE Proceedings

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“…For these reasons, Q-factors of III-nitride-based 2D-PhC cavities are relatively low, specifically in the visible region (up to ∼5500). [6][7][8][15][16][17][18][19][20][21][22] It is well-known that other losses related to surface scattering, absorption, etc also decrease Q-factors, 22,23) Triviño et al experimentally and theoretically analyze IIInitride-based 2D-PhC cavities in the infrared regime and suggest that structural disorder is the main loss limiting experimental Q-factors for L3 cavities. 9) Therefore, in this report, we focus on the cavity design by considering tolerance to structural disorder based on simulations.…”

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confidence: 99%

“…Although laser oscillation in In x Ga 1−x N-based 2D-PhCs has been reported in near-the ultraviolet and violet range, 15,21) the low Q-factors prevent lasing at longer wavelengths. In x Ga 1−x N active layers with high In-composition are expected for green/red emission, but they typically have low crystal quality due to large lattice mismatch with GaN.…”

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confidence: 99%

Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

Iwaya

Ichikawa

Murakami

et al. 2021

Appl. Phys. Express

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We present a study on the improvement of quality factors (Q-factors) of III-nitride-based two-dimensional photonic crystal (2D-PhC) nanocavities. Although III-nitride-based 2D-PhC cavities have been studied for long time, they typically show relatively low experimental Q-factors due to disorders inevitably introduced during the fabrication processes. In order to realize high-Q-factors, it is necessary to introduce cavities that are tolerant to disorder. We numerically reproduce the experimental found disorder in simulations, and discuss the influence of disorder on Q-factors of several types of cavities. We demonstrate the suitability of these cavities for the realization of high-Q-factors, and show which structures have the largest tolerance for disorders.

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“…Quantum well (QW) active regions have been incorporated into microdisks 3,6 , microrings 7 , and photonic crystal structures 8,9 . In general, the room-temperature thresholds of the structures have been in the range of a few mJ/cm 2 (for pulsed measurements) 10 , or a few hundred kW/cm 2 (CW) 6,11 . This work describes the incorporation of quantum dot (QD) -containing active regions within high Q (~ 6,000) microdisk cavities.…”

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confidence: 99%

Low threshold, room-temperature microdisk lasers in the blue spectral range

Aharonovich

Woolf

Russell

et al. 2013

Applied Physics Letters

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InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm 2 . This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.

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GaN-based photonic crystal surface emitting lasers with central defects

Cited by 10 publications

References 14 publications

Fano resonances GaN-based high contrast grating surface-emitting lasers

Fano resonances GaN-based high contrast grating surface-emitting lasers

Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder

Low threshold, room-temperature microdisk lasers in the blue spectral range

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