Gas sensing performance of Al doped ZnO thin film for H2S detection

Kolhe, Pankaj; Shinde, Alpana B.; Kulkarni, Shreyas; Maiti, Namita; Koinkar, Pankaj; Sonawane, Kishor M.

doi:10.1016/j.jallcom.2018.03.123

Cited by 111 publications

(38 citation statements)

References 30 publications

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“…This can be interpreted in terms of the large difference between atomic and ionic radii of Zn atoms and In atoms (atomic and ionic radii of 156 pm and 76 pm). Furthermore, Al-doped ZnO and Ga-doped ZnO thin films are found to exhibit all ZnO diffraction peaks at (100), (002), and (101) diffraction planes, in good agreement with the findings of [5,71,72] and T. Ivanova et al [73]. In addition, XRD patterns revealed that all crystallographic orientations are shifted into small Bragg's angles, that could be explained in terms of the difference between atomic and ionic radii of Zn atoms and Al atoms (atomic and ionic radii of 118 pm and 53 pm) and Ga atoms (atomic and ionic radii of 136 pm and 61 pm).…”

Section: X-ray Diffraction Analysissupporting

confidence: 87%

“…In particular, ZnO is considered to be a very important semiconductor material due to its fundamental and physical properties. It has been reported and implemented as a key candidate material for potential applications in optoelectronic devices, photovoltaic devices, gas sensors, light emitting diodes, and pharmaceutical applications [1][2][3][4][5]. ZnO has been the focal point of much recent research because it possesses certain characteristics that make it a very interesting material from both fundamental and practical points of view.…”

Section: Introductionmentioning

confidence: 99%

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Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Section: X-ray Diffraction Analysissupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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“…Sensors made of metal oxide nanostructures are normally effective to detect both UV light and poisonous gases, and developing new types of nanostructured sensing materials is one of the key factors for the successful application of these sensors. Many types of nanostructured metal oxides have been investigated to detect UV light or poisonous gases, and these include SnO2 [3], ZnO [4,5], Fe2O3 [6], TiO2 [7], NiO [8], In2O3 [9], CuO [10], and so on. Among these, In2O3 nanostructures have been proven to have good responses to UV light and various toxic gases.…”

Section: Introductionmentioning

confidence: 99%

Ultra-sensitive UV and H2S dual functional sensors based on porous In2O3 nanoparticles operated at room temperature

Yan

Zhang

et al. 2019

Journal of Alloys and Compounds

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2019) Ultra-sensitive UV and H2S dual functional sensors based on porous In2O3 nanoparticles operated at room temperature. Journal of Alloys and Compounds, 770. pp. 721-731. AbstractA dual functional sensor for detecting both UV light and H2S gas was fabricated using the hexagonal phase porous In2O3 nanoparticles, which were prepared using the hydrothermal and calcination process. The porous In2O3 nanoparticles with large surface areas and pore volumes could provide plenty of active sites to produce much active oxygen species, which were beneficial for the UV light and H2S gas sensing reactions, thus resulting in a good sensing performance. At room temperature, the dual functional sensor based on porous In2O3 nanoparticles exhibited ultra-high responses for sensing both UV light (with a wavelength of 365 nm) and H2S gas. As a UV sensor, its response was 12886.0 for a UV power intensity of 1.287 mW/cm 2 and its detection limit was 0.013 mW/cm 2 . As a H2S gas sensor, the sensor exhibited an ultra-high response (26268.5 to 1 ppm H2S) and a very low detection limit (1ppb of H2S), and it also have excellent selectivity, reversibility and stability. 2

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“…TCOs usually consist of transition metal cations (called TCO cations) because the powerful delocalized s orbitals of these cations form a dispersed conduction band. Their effective electron mass is very small, which assures high mobility and a wide band gap [3], such as In 3+ [4,5], Zn 2+ [6][7][8], and Sn 4+ [9,10]. Due to the remarkable optical and electrical properties, doped TCO layers are integrated into many optoelectronic devices, which are widely used in photovoltaic solar cells [11][12][13], flat panel displays [14][15][16], photoelectric sensors [17], and film transistors [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

Han

Zhao

et al. 2019

Materials

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Transparent conductive IWO/Cu/IWO (W-doped In2O3) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron–manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10−4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.

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Gas sensing performance of Al doped ZnO thin film for H2S detection

Cited by 111 publications

References 30 publications

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Ultra-sensitive UV and H2S dual functional sensors based on porous In2O3 nanoparticles operated at room temperature

Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

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