GaSe:Er3+ crystals for SHG in the infrared spectral range

Feng, Zhi-Shu; Guo, Jin; Xie, Jing-Yi; Zhang, L.-M.; Gao, Jigang; Andreev, Yu. M.; Izaak, T. I.; Кох, К. А.; Ланский, Г. В.; Shaiduko, A. V.; Shabalina, Anastasiia V.; Svetlichnyi, V. A.

doi:10.1016/j.optcom.2013.12.050

Cited by 25 publications

(12 citation statements)

References 29 publications

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“…Therefore, the solubility of the following types of dopants is very limited and is difficult to measure accurately: f8 3 10 22 for Al 36,42,50 and 5 3 10 24 for Er 21 . The available data for 0.5 at.% Er doping of GaSe by charge composition is claimed to have resulted in a 24% increase in the intrinsic nonlinearity 71 ; this result appears to be inconsistent, as Er has such low solubility.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…GaSe doped with 0.5 at.% of Er in charge composition demonstrated a 24% increase in the intrinsic nonlinearity 71 . Bearing in mind the low Er solubility 21 , the increase appears to be due largely to the improved optical quality. It was established properly that the maximal transparency window 42,49,55,61,69 and THz range 51 absorption coefficients for all properly doped crystals grown by the modified method, i.e., with a rotating heat field, are 2-3 times lower (f0.03-0.06 cm 21 ) than those for crystals grown by the conventional vertical Bridgman method.…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 99%

“…Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) layers (0.162 W(cm?deg) 21 ), accompanied by large thermal capacity C p 5 47.9 J (mol?deg) 21 and density 5.05 g cm 23 , close coefficients of linear thermal expansion a | 5 10.8?10 26 deg 21 and a H 5 9.1?10 26 deg 21 , and low two-photon absorption coefficients 0.2-0.5 cm 21 GW 21 for 0.7-0.8 mm pumping. The physical properties are well reviewed elsewhere 5,9 .…”

Section: Introductionmentioning

confidence: 99%

“…The hardness of GaSe has been measured to be close to 0 on the Mohs' scale 9 . The limited optical quality of grown GaSe crystals is caused by the weak technological control of defects: point defects (mainly Ga vacancies) and micro-defects (Ga precipitates, voids or bubbles, stacking disorders, broken layers, and dislocations) 20,21,22 . In particular, the dislocation density can reach 10 9 cm 22 22 , and the fraction of layer stacking faults may be up to 0.67 23 .…”

Section: Introductionmentioning

confidence: 99%

“…The original e-polytype structure of GaSe is strengthened by doping; meanwhile, the physical properties responsible for the efficiency of frequency conversion and the possibility of electro-optic applications may be noticeably modified. However, due to the negative effect on optical nonlinearity of doping by sulfur, the first agent explored 24 , only a few other dopants (In, Te, Er, and Ag), in limited concentration ranges, were used until the last decade to modify further physical properties for nonlinear optical applications 19,21,25,26 . In addition, these studies are mostly related to the physical properties of the ordinary light waves.…”

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%