Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures

Yi, Wei; Kiselev, A. A.; Thorp, J. S.; Noah, Ramsey; Nguyen, Binh Minh; Bui, S.; Rajavel, R. D.; Hussain, T.; Gyure, Mark F.; Kratz, Philip; Qian, Qi; Manfra, Michael J.; Pribiag, Vlad; Kouwenhoven, Leo P.; Marcus, C. M.; Sokolich, M.

doi:10.1063/1.4917027

Cited by 36 publications

(34 citation statements)

References 22 publications

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“…2(f) and 2(g) present a very detailed 2D gate bias map of the electron density. Selfconsistent Schrödinger-Poisson simulations [32] of the device stack, closely matching results of the equivalent capacitor model [see Fig. 1(a)], accurately reproduce this experimental bias dependence of electron density requiring, e.g., at V BG ¼ 0.5 V, about 0.136 V of additional top gate bias per LL versus 0.134 V per LL measured.…”

Section: H Y S I C a L R E V I E W L E T T E R Ssupporting

confidence: 49%

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry

et al. 2016

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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 k/m. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

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Section: H Y S I C a L R E V I E W L E T T E R Ssupporting

confidence: 49%

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry

et al. 2016

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“…However, in materials with strong spin-orbit coupling for which the induced triplet pairing is relevant, the spin-orbit length is comparable to the Fermi wavelength; therefore, as long as these materials remain "good metals" (k F 1), the results of this work should apply. Recent experiments have measured an electron mobility exceeding 200 000 cm 2 /V·s in an InSb/InAlSb quantum well, 48 thus demonstrating an ability to fabricate ultraclean materials with strong spin-orbit coupling.…”

Section: E Recovering the Quasiclassical Limitmentioning

confidence: 99%

Proximity-induced triplet superconductivity in Rashba materials

Reeg

Maslov

2015

Phys. Rev. B

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We study a proximity junction between a conventional s-wave superconductor and a conductor with Rashba spin-orbit coupling, with a specific focus on the spin structure of the induced pairing amplitude. We find that spin-triplet pairing correlations are induced by spin-orbit coupling in both one- and two-dimensional systems due to the lifted spin degeneracy. Additionally, this induced triplet pairing has a component with an odd frequency dependence that is robust to disorder. Our predictions are based on the solutions of the exact Gor'kov equations and are beyond the quasiclassical approximation.Comment: 12 pages, 4 figure

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“…InSb satisfies all of these requirements 25–28 and has emerged as a prime material candidate for engineering topological superconductivity, as evident from nanowire-based systems 29,30 . However, despite significant progress in the growth of InSb 2DEGs 31,32 , material challenges have prevented a systematic study of the superconducting proximity effect in these systems.…”

Section: Introductionmentioning

confidence: 99%

Ballistic superconductivity and tunable π–junctions in InSb quantum wells

Moehle

Vries

et al. 2019

Nat Commun

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Planar Josephson junctions (JJs) made in semiconductor quantum wells with large spin-orbit coupling are capable of hosting topological superconductivity. Indium antimonide (InSb) two-dimensional electron gases (2DEGs) are particularly suited for this due to their large Landé g-factor and high carrier mobility, however superconducting hybrids in these 2DEGs remain unexplored. Here we create JJs in high quality InSb 2DEGs and provide evidence of ballistic superconductivity over micron-scale lengths. A Zeeman field produces distinct revivals of the supercurrent in the junction, associated with a 0− π transition. We show that these transitions can be controlled by device design, and tuned in-situ using gates. A comparison between experiments and the theory of ballistic π -Josephson junctions gives excellent quantitative agreement. Our results therefore establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, spin-orbit interaction and magnetism.

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Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures

Abstract: Quantum transport in high mobility modulation doped Ga 0.25 In 0.75 As/InP quantum wells

Cited by 36 publications

References 22 publications

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry

Decoupling Edge Versus Bulk Conductance in the Trivial Regime of anInAs/GaSbDouble Quantum Well Using Corbino Ring Geometry

Proximity-induced triplet superconductivity in Rashba materials

Ballistic superconductivity and tunable π–junctions in InSb quantum wells

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