2010
DOI: 10.1149/1.3246000
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Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs

Abstract: Ge films were epitaxially grown on GaAs͑100͒ substrates and Ga 0.88 In 0.12 As͑100͒ virtual substrates using an ultrahigh vacuum/ chemical vapor deposition system. The incubation time of Ge growth depends on Ga͑In͒As surfaces that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the quality of Ge grown on GaAs, an n + -Ge/p-GaAs diode was… Show more

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Cited by 16 publications
(6 citation statements)
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“…Heterogeneous integration of Ge and GaAs has attracted much attention due to their promising applications in optoelectronic devices such as solar cells and dual band optical sensors because of the expanded spectral coverage [1][2][3][4][5]. The negligible distinction in the lattice constants and thermal expansion coefficients of Ge and GaAs poses convenience for this heterogeneous integration.…”
Section: Introductionmentioning
confidence: 99%
“…Heterogeneous integration of Ge and GaAs has attracted much attention due to their promising applications in optoelectronic devices such as solar cells and dual band optical sensors because of the expanded spectral coverage [1][2][3][4][5]. The negligible distinction in the lattice constants and thermal expansion coefficients of Ge and GaAs poses convenience for this heterogeneous integration.…”
Section: Introductionmentioning
confidence: 99%
“…[23][24][25][26] Ge/GaAs interfaces with exceedingly small lattice mismatch posses many advantages over the strained interface. Ge layers grown on GaAs substrate were studied because of their widespread applications in solar cells, [27] metal-oxide-semiconductor field-effect transistors, [28] millimeter-wave mixer diodes, [29] temperature sensors, [30] and photodetectors. [31] Considering a GaAs/Ge/GaAs quantum well (QW) grown along the polar direction [111] (see Fig.…”
mentioning
confidence: 99%
“…It shows a considerable advantage over other TI systems including graphene [3], HgTe QW, [4,5] the Bi chalcogenides [9] and the Heusler compounds [12,17]. GaAs/Ge/GaAs sandwiched structures are readily to be integrated with conventional semiconductors which are already extensively used in electronic devices [23][24][25][26][27][28][29][30][31]. The imposed electric field can be controlled by applying extra electric field or by inducing holes or electrons into the QW region via a gate voltage, providing us a direct way of manipulating the TI transition in the device.…”
mentioning
confidence: 99%
“…As we know, the surface stoichiometry of GaAs is strongly dependent on the wet cleaning steps, and the temperatures and pressures employed in the surface desorption and film growth, which in turn determines the resultant T inc . 11 In other words, the same observed incubation time of (111)A and (100) GaAs surfaces means that the Ga/As ratio of both samples approach to 1/1 after a prebake step of 600 • C.…”
Section: Resultsmentioning
confidence: 76%