Ge semiconductor devices for cryogenic power electronics - II

Ward, R.R.; Dawson, W.J.; Kirschman, Randall; Mueller, O.; Patterson, R. S.; Dickman, J.E.; Hammoud, Ahmad

doi:10.1109/wolte.2002.1022452

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…These devices include: Ge-based diode; bipolar transistor and a metal-insulator-semiconductor capacitor (MIS) [42]. A Ge JFET was demonstrated to operate with stable DC characteristics and low gate reverse leakage current at temperatures as low as 4K.…”

Section: Low Temperature Semiconductor Materialsmentioning

confidence: 99%

Extreme Temperature Electronics - from Materials to Bio-inspired Adaptation

Laketic

Haddow

2007

Second NASA/ESA Conference on Adaptive Hardware and Systems (AHS 2007)

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Section: Low Temperature Semiconductor Materialsmentioning

confidence: 99%

Extreme Temperature Electronics - from Materials to Bio-inspired Adaptation

Laketic

Haddow

2007

Second NASA/ESA Conference on Adaptive Hardware and Systems (AHS 2007)

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“…We have undertaken development of power semiconductor devices based on SiGe and Ge, intended for operation over a wide temperature range, from room temperature down to deep cryogenic temperatures (down to ~ 30 K or ~ -240°C) (1)(2)(3)(4).…”

Section: Introductionmentioning

confidence: 99%

SiGe and Ge Cryogenic Power Transistors

et al. 2006

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We have undertaken development of power semiconductor devices based on SiGe and Ge, intended for operation over a wide temperature range, from room temperature down to deep cryogenic temperatures, ~30 K (~ -240{degree sign}C). We summarize results for Ge diodes (~10 A/400 V), Ge junction field-effect transistors (Ge JFETs, ~0.5 A/30 V), Ge metal-insulator field-effect transistors (Ge MIS-FETs ~1 A/20 V) and SiGe heterojunction bipolar transistors (SiGe HBTs, ~10 A/50 V). As a practical demonstration, we have used SiGe HBTs and SiGe diodes as the active devices in 100-W power-conversion circuits, operating from room temperature down to ~30 K (~ -240{degree sign}C) with increased efficiency as temperature de-creases. Our developments demonstrate the potential of alternative semiconductor materials to provide excellent performance for power applications down to deep cryogenic temperatures.

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confidence: 99%

“…These have a variety of possible applications [5]; the particular motivation for this work is NASA's interest in power-management circuits for spacecraft [7,8]. Many of the most interesting sites in Solar System exploration would subject spacecraft to extremely low temperatures: Moon surface, Pluto orbit/Kuiper Belt, comet sample return, Mars, Titan, Io and Europa.…”

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confidence: 99%