GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate

Serre,; Semikh,; Uznanski,; Autran,; Munteanu,; Gasiot,

doi:10.1109/radecs.2011.6131292

Cited by 12 publications

(17 citation statements)

References 6 publications

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“…This last quantity corresponds to a silicon recoil nucleus in silicon material with a kinetic energy of 40 keV, considered in [3] as the lowest deposited charge susceptible to induce a soft error in a bulk 65 nm SRAM memory. For standardization purpose and comparison with results presented in [2], we adopted here the same lowest deposited charge (1.8 fC corresponds to 11,250 electrons) that leads to E th = 11,250 x E eh . In other words, all neutron-induced products with energies below E th will not be considered in the databases (see paragraph 2.3).…”

Section: Semiconductor Materialsmentioning

confidence: 99%

“…In such a context of growing use of new and specific semiconductors, the question of their susceptibility to natural radiation, primarily to atmospheric neutrons at ground level, is posed for high-reliability-level application domains. A special attention should be particularly paid to low-bandgap materials (Ge and most of III-V materials), envisaged as channel replacement for MOSFETs and steep switching tunnel FETs for low voltage application [2], due to their low ionization energy susceptible to amplify charge generation from sea-level neutron radiation.…”

Section: Introductionmentioning

confidence: 99%

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Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

Munteanu¹,

Autran²

2018

Numerical Simulations in Engineering and Science

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New semiconductor materials are envisaged in numerous high-performance applications for which the expected device or circuit performances cannot be achieved with silicon. In this context of growing use of new and specific semiconductors, the question of their susceptibility to natural radiation, primarily to atmospheric neutrons, is posed for high-reliability-level application domains. This numerical simulation work precisely examines nuclear events resulting from the interaction of atmospheric neutrons at the terrestrial level with a target layer composed of various group-IV and III-V semiconductor materials including silicon, germanium, silicon carbide, carbon-diamond, gallium arsenide, and gallium nitride materials. Using extensive Geant4 simulations and in-depth data analysis, this study provides an accurate and fine comparison between the neutron interaction responses of these different semiconductors in terms of nuclear processes, recoil products, secondary ion production, and fragment energy distributions. Implications of these results on the rate of single-event transient effects at the device or circuit level are also discussed.

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Section: Semiconductor Materialsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

Munteanu¹,

Autran²

2018

Numerical Simulations in Engineering and Science

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“…The electron-hole pair generation induced by the particle strike is included in the continuity equations via an additional generation rate. In the particular case of neutrons that interact with matter by indirect ionization, these effects can be simulated with TCAD simulators by considering the different neutron reaction products (charged particles) in the simulation [30]. The main inconvenient of this TCAD simulation is the computation time, which can be very important depending on the simulation domain size and the equations considered for the transport (drift-diffusion, hydrodynamic).…”

Section: Modeling Issuesmentioning

confidence: 99%

Radiation and COTS at ground level

Autran

Munteanu

2015

Microelectronics Reliability

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“…GEANT4 is an open source C++ simulation tool developed by CERN and normally used for the elementary particle distribution in particle colliders [23,24]. In the program physical models are implemented, [25].…”

Section: Model Descriptionmentioning

confidence: 99%

GEANT4 simulations in terms of radiation hardness of commercially available SRAM

Moujbani

Weide‐Zaage

Romer³

et al. 2015

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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Commercial of the shelf (COTS) SRAMS were investigated by measurements and simulation in terms of radiation hardness. For the simulations the GEANT4 tool was used. With GEANT4 it is possible to determine the different particles generated by the applied energy as well as the radiation source. It was found that the single event upsets (SEU) is related to the radiation energy, technology node and react differently for the investigated SRAM. Furthermore a possible correlation between the generated particles and the SEU was found.

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GEANT4 analysis of n-Si nuclear reactions from different sources of neutrons and its implication on soft-error rate

Cited by 12 publications

References 6 publications

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

Susceptibility of Group-IV and III-V Semiconductor-Based Electronics to Atmospheric Neutrons Explored by Geant4 Numerical Simulations

Radiation and COTS at ground level

GEANT4 simulations in terms of radiation hardness of commercially available SRAM

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