2019
DOI: 10.1103/physrevb.99.035305
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General condition for realizing a collinear spin-orbit effective magnetic field in two-dimensional electron systems and its application to zinc-blende and wurtzite quantum wells

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Cited by 7 publications
(4 citation statements)
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“…Despite the extensive research, the investigation has usually been restricted to quantum wells grown along the [001], [110], or [111] direction [6,14,15,[21][22][23][24][25][26][27][28][29][30][31][32][33][34]. It is until recently that attention has been paid to a general crystal orientation [35][36][37]. It was found that the recovery of the SU(2) symmetry can be realized for some growth direction Miller indices, with consequences like the transition from weak anti-localization to weak localization [35] or lifetime enhancement of spin helices [38].…”
Section: Introductionmentioning
confidence: 99%
“…Despite the extensive research, the investigation has usually been restricted to quantum wells grown along the [001], [110], or [111] direction [6,14,15,[21][22][23][24][25][26][27][28][29][30][31][32][33][34]. It is until recently that attention has been paid to a general crystal orientation [35][36][37]. It was found that the recovery of the SU(2) symmetry can be realized for some growth direction Miller indices, with consequences like the transition from weak anti-localization to weak localization [35] or lifetime enhancement of spin helices [38].…”
Section: Introductionmentioning
confidence: 99%
“…Other experiments include the study of the optimal conditions to grow CdTe on a GaAs substrate oriented along [013] [43], and the proposal of sublattice reversal epitaxy on (113)B GaAs substrates as a method to realize the sign change of the second-order susceptibility in THz devices [44]. It is however, until recently that attention has been paid to a general crystal orientation [45][46][47]. It was found that the recovery of the SU(2) symmetry can be realized for some growth direction Miller indices, with consequences like the transition from weak anti-localization to weak localization [45] or lifetime enhancement of spin helices [48].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, various studies on semiconductors for optoelectronic devices have been theoretically predicted on ZnO-wz [11,12,13] and GaN-wz [11,12,14]. On the other hand, producing two-dimensional (2D) structures in these materials in terms of surface and interface are increasingly in demand [15,16], which is expected to induce useful properties for spintronics applications.…”
Section: Introductionmentioning
confidence: 99%