Generally Applicable Self-Masking Technique for Nanotips Array Fabrication

Abstract

Well-aligned nanotip arrays were fabricated via a self-masking dry etching technique in an electron cyclotron resonance (ECR) plasma process. Nanotip arrays of Si , poly silicon, GaN , GaP , sapphire, and Al were fabricated. Simultaneous etching of the substrate and formation of silicon carbide ( SiC ) protecting caps are attributed to the nanotip formation. The ultra-low turn-on field for electron field emission as well as the surface enhanced Raman Spectroscopic study of Si nanotips is also demonstrated.