Generation of RGB-D data for SLAM using robotic framework V-REP

Gritsenko, Pavel; Gritsenko, Igor; Seidakhmet, Askar; Abduraimov, A.

doi:10.1063/1.5000659

Cited by 3 publications

(6 citation statements)

References 16 publications

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“…Many research groups have studied the effects of thermal annealing on the structural, optical, and electrical properties of ZnO thin films grown by different techniques such as sputtering, 28,29 molecular beam epitaxy, 30 wet chemistry 31 or MOCVD. 32 They have shown that the thermal annealing can improve the crystallinity of ZnO thin films and reduce the density of extended defects in their center. Under oxygen atmosphere, the thermal annealing causes oxygen chemisorption onto grain boundaries, which could lead to the decrease in free charge carrier density and mobility.…”

Section: Introductionmentioning

confidence: 99%

“…Under oxygen atmosphere, the thermal annealing causes oxygen chemisorption onto grain boundaries, which could lead to the decrease in free charge carrier density and mobility. 32 These consequences would be favorable to improve the piezoelectric performance. However, the effects of thermal annealing on the piezoelectric coefficients, and especially the crystal polarity of ZnO thin films as well as their correlation with the structural and electrical properties have not been investigated yet.…”

Section: Introductionmentioning

confidence: 99%

“…The variation of the electrical resistivity after annealing can be related to the variation of the charge carrier density and mobility, which are inversely proportional to the electrical resistivity. By increasing annealing temperature, some reports have shown that the resistivity of ZnO increases, 32,50 while other reports have shown that it decreases. 30,35 The increase in the electrical resistivity was explained by i) the atoms relocated during thermal annealing in such a way that a reduced amount of defects that act as shallow donors in ZnO occurs, thus leading to a decrease in the charge carrier density, 50 or by ii) the oxygen adsorbed at the grain boundary after thermal annealing under oxygen atmosphere, creating depletion zones that decrease the charge carrier density and hamper the movement of charge carriers.…”

mentioning

confidence: 98%

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Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

Bui

Salem

Roussel

et al. 2021

Journal of Alloys and Compounds

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The growth process and post-deposition treatment have strong effects on the structure of ZnO thin films, which can also significantly affect their electrical and piezoelectric properties. In this report, the effect of high temperature annealing under oxygen atmosphere on ZnO stacked thin films grown on silicon by pulsed-liquid injection metal-organic chemical vapor deposition is investigated in detail. By varying the annealing temperature from 600 to 1000 °C, the structural analysis reveals the occurrence of c-axis oriented grain coarsening and growth processes associated with the improvement of crystallinity and removal of carbon impurities. The electrical resistivity also strongly varies with thermal annealing. Those variations are accompanied by an enhancement of the piezoelectric amplitude measured by piezo-response force microscopy (PFM). Interestingly, the PFM measurements reveal the predominant development of O-and Zn-polar domains at low and high temperature annealing, respectively, originating from the anisotropic grain boundary velocity. The present findings show that the high temperature annealing under oxygen atmosphere in ZnO thin films can enhance not 2 only its piezo-amplitude but also its Zn-polarity uniformity, which unambiguously leads to the improvement of its piezoelectric performance.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 98%

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Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

Bui

Salem

Roussel

et al. 2021

Journal of Alloys and Compounds

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“…In previous benchmarking studies, the revTPSS functional has performed particularly well for the relative energies and geometries of Au NCs. 74 For all NCs within 11.9 kcal/mol of the most stable structure in the revTPSS optimizations, the lowest 200 excited states in dipole-allowed symmetry groups were computed using a timedependent DFT (TD-DFT) approach with the SAOP functional 75 and TZP all-electron basis set.…”

Section: Methodsmentioning

confidence: 99%

Hydride- and Halide-Substituted Au9(PH3)83+ Nanoclusters: Similar Absorption Spectra Disguise Distinct Geometries and Electronic Structures

Ceylan¹,

Gieseking

2021

Preprint

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Ligands can dramatically affect the electronic structure of gold nanoclusters (NCs) and provide a useful handle to tune the properties required for nanomaterials that have high performance for important functions like catalysis. Recently, questions have arisen about the nature of the interactions of hydride and halide ligands with Au NCs: hydride and halide ligands have similar effects on the absorption spectra of Au NCs, which suggested that the interactions of the two classes of ligands with the Au core may be similar. Here, we elucidate the interactions of halide and hydride ligands on phosphine-protected gold clusters via theoretical investigations. The computed absorption spectra using time-dependent density functional theory are in reasonable agreement with the experimental spectra, confirming that the computational methods are capturing the ligand-metal interactions accurately. Despite the similarities in the absorption spectra, the hydride and halide ligands have distinct geometric and electronic effects. The hydride ligand behaves as a metal dopant and contributes its two electrons to the number of superatomic electrons, while the halides act as electron-withdrawing ligands and do not change the number of superatomic electrons. Clarifying the binding modes of these ligands will aid in future efforts to use ligand derivatization as a powerful tool to rationally design Au NCs for use in functional materials.<br>

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“…To achieve these challenging dielectric targets, high‐ k thin films must be used, such as hafnium oxide (HfO 2 ), that is a promising candidate to replace SiO 2 as gate dielectric in CMOS–based and logic devices, and as metal oxide for resistive random access memory . This interest arises because hafnium oxide combines a large bandgap ( E g = 5.1–6.1 eV), a dielectric permittivity (ε = 16–25) significantly higher than that of silicon oxide (3.9), high thermal stability, and high thermodynamic stability in contact with silicon.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Oxidation of Hf–Nb Alloys as a Valuable Route to Prepare Mixed Oxides of Tailored Dielectric Properties

Zaffora

Quarto

Kura

et al. 2018

Adv Elect Materials

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Metal oxides with high dielectric constant are extensively studied in the frame of substituting SiO2 as gate dielectric in nanoelectronic devices. Here, high‐k mixed HfO2/Nb2O5 oxides are prepared by a facile electrochemical route starting from sputtering‐deposited Hf–Nb alloys with several compositions. Transmission electron microscopy, grazing incidence X‐ray diffraction, and glow discharge optical emission spectroscopy are employed to study the oxide structures, disclosing a crystalline–amorphous transition of the electrochemically prepared oxides by increasing the Nb content. Photo‐electrochemical measurements allow the observation of optical transitions ascribed to localized states inside oxide bandgap induced by the presence of oxygen vacancies for Hf‐rich oxides. Impedance measurements, coupled with withstand voltage and leakage current estimates, provide a comprehensive view of the real dielectric properties of the oxides. The highest ε is estimated for the anodic oxide grown on Hf–39 at% Nb (i.e., 45) but thin film grown on Hf–57 at% Nb alloy shows the best dielectric properties, revealing high dielectric constant, high withstand voltage, and low leakage current. Promising equivalent oxide thickness (down to 0.38 nm) is estimated for the oxide thin layers. The electrochemical oxidation represents a valuable and reliable way to prepare high‐k thin oxide films with tailored and controlled dielectric properties.

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Generation of RGB-D data for SLAM using robotic framework V-REP

Cited by 3 publications

References 16 publications

Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

Effects of thermal annealing on the structural and electrical properties of ZnO thin films for boosting their piezoelectric response

Hydride- and Halide-Substituted Au9(PH3)83+ Nanoclusters: Similar Absorption Spectra Disguise Distinct Geometries and Electronic Structures

Electrochemical Oxidation of Hf–Nb Alloys as a Valuable Route to Prepare Mixed Oxides of Tailored Dielectric Properties

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