Generic high‐frequency small‐signal look‐up table model extraction for Si–Ge heterojunction bipolar transistors

Abstract

The objective of this paper is to provide a generic and versatile small-signal look-up table model extraction approach for Si-Ge heterojunction bipolar transistors. In this paper, parameter extraction at high frequencies, especially in the millimeter-wave region, is described. The approach is experimentally demonstrated on a Si-Ge heterojunction bipolar transistor with eight fingers and the emitter size of 0.18 × 0.84 μm 2 .