We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers in thickness on a GaAs(001) substrate has been observed at 300 • C by using in situ scanning tunneling microscopy. The surface exhibits (1 × 3)/(2 × 3) and (2 × 4) reconstruction domains. A nearest-neighbor analysis finds that point pattern of quantum dot precursors was more similar to that of (1 × 3)/(2 × 3) domains which are specific to Ga-rich region. This provides the evidence that InAs quantum dot nucleation is induced by Ga-rich fluctuation within an InAs wetting layer.PACS numbers: 68.37. Ef, 68.43.Hn, 68.47.Fg, 68.55.ag Quantum dots (QDs) are potentially used in semiconductor laser devices and single photon sources of quantum computation and quantum communication [1][2][3][4]. Although it has been pointed out that highly dense and uniform QD arrays are essential for the efficiency of the devices, little is known of the growth mechanism of QDs to control the nucleation sites on a Stranski-Krastanow (SK) grown wetting layer (WL). Some atomic-level theoretical studies on dynamics of surface atoms have been carried out to understand the growth mechanisms [5][6][7][8]. First principle calculations showed that the migration barrier energy of In adatom on GaAs(001) surface is higher than that on 1ML-InAs/GaAs(001) [6,7]. Using kinetic Monte Carlo (kMC) simulations [8], Tsukamoto et al. found that some migrating In adatoms were captured on Ga-rich fluctuation, within an In/Ga mixed layer, to become a nucleation site [9]. To the best of our knowledge, however, there has not been reported any direct evidence that alloy fluctuation becomes a QD nucleation site. It is still vital to investigate WL surface in an atomic scale, in particular the surface reconstruction, preceding QD nucleation.Since surface reconstruction changes microscopically and dynamically in the course of WL growth [10][11][12], in situ scanning tunneling microscopy (STM) during molecular beam epitaxy (MBE) growth at high temperatures, such as STMBE [13], is one of powerful tools to observe it. It is reported that fast Fourier transform analysis of atomic-scale in situ STM images of InAs WL on a GaAs(001) substrate, as well as reflectance highenergy electron diffraction (RHEED) measurements, has revealed that the surface reconstruction changes from c(4 × 4) to the mixed structure of (1 × 3)/(2 × 3) domains and (2 × 4) domains prior to QD formation [9].Structure models of (1 × 3)/(2 × 3) and (2 × 4) surface reconstructions have been investigated by many researchers using core-level photoemission spectroscopy [14], reflectance-difference spectroscopy [15], ab initio calculations in a local density approximation [6, * konishi@anan-nct.ac.jp [110] [110]In Ga As 15], and STM observations [16,17], which are, however, still under discussion. Figure 1 shows the schematic diagrams, reproduced from the literature, of...