Giant quadratic magneto-optical Kerr effect in (Eu,Gd)O films for magnetic field sensing

Kats, V. N.; Nefedov, S. G.; Shelukhin, L. A.; Usachev, P. A.; Averyanov, Dmitry V.; Karateev, Igor A.; Parfenov, Oleg E.; Талденков, А. Н.; Tokmachev, Andrey M.; Storchak, Vyacheslav G.; Павлов, В. В.

doi:10.1016/j.apmt.2020.100640

Cited by 14 publications

(14 citation statements)

References 35 publications

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“…All this explains the continuing appeal of magneto-optical studies of EuO. 34–38 In particular, our experiments with EuO films have demonstrated a record-high quadratic magneto-optical Kerr effect 38 that can be employed for vector sensors of magnetic fields.…”

Section: Introductionmentioning

confidence: 79%

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

et al. 2023

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Section: Introductionmentioning

confidence: 79%

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

et al. 2023

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“…Recently, a giant linear and quadratic magneto-optical Kerr effect (MOKE) was observed in Gd:EuO thin films (57 and 97 nm thicknesses) grown on yttria-stabilized zirconia (Y 2 O 3 -ZrO 2 ) substrate. 31 In all of these studies, the EuO films have thicknesses exceeding 50 nm.…”

Section: Introductionmentioning

confidence: 99%

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Shah

Annaorazov

Rimal

et al. 2023

ACS Appl. Mater. Interfaces

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Utilizing pulsed laser deposition, a film of EuO 1−x was deposited onto a Si(001) substrate with MgO buffer and compared to the same heterostructure with an additional BaTi 2 O 5 thin film on top of the EuO 1−x surface. X-ray diffraction (XRD) indicates the films crystallize into a preferred EuO(111) orientation; it also reveals the clear presence of EuSi 2, which suggests Si or Eu diffuses across the MgO buffer layer. EuO 1−x films exhibit a ferromagnetic (FM) signature and temperature-dependent exchange bias, indicated by MOKE measurements, suggesting the presence of a magnetic order well above the EuO Curie temperature with possible origins in charge carrier density near the interface. In comparison, an antiferromagnetic character persists well above the EuO Curie temperature of 69 K and the enhanced Curie temperature of 150 K for BaTi 2 O 5 films grown on the EuO 1−x films. The antiferromagnetic behavior is not seen in thicker EuO 1−x thin films when integrated with other ferroelectric (FE) phases of the BaO−TiO 2 system, suggesting an origin in the perturbed charge population at the BaTi 2 O 5 /EuO 1−x interface.

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“…To test this hypothesis, we study here LT synthesis of the ferromagnetic semiconductor EuO on Si. The oxide is known for advanced properties tunable by doping and strain engineering; [ 17,18 ] it enjoys record magneto‐optical [ 19 ] and magnetotransport [ 20 ] characteristics. Recently, EuO has drawn attention as a component of oxide structures generating a 2D superconducting electron gas.…”

Section: Introductionmentioning

confidence: 99%

Chaos at Interface Brings Order into Oxide/Silicon Structure

Averyanov

Sokolov

Karateev

et al. 2021

Adv Funct Materials

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Integration of oxides with silicon fuses advanced functional properties with a mature technological platform. In particular, direct EuO/Si contact holds high promise for spintronics but requires single‐crystalline epitaxial films with atomically sharp interfaces. The standard approach employing regular 2D superstructures of metal atoms on the Si surface fails to meet the challenge. Here, an alternative route is designed and shown to solve the problem. This route avoids regular templates; the chaotic 2D distribution of metal atoms on the Si surface prevents stabilization of unwanted crystal orientations. Thus, the disordered submonolayer phase at the interface promotes order in oxide/Si coupling, as witnessed by a combination of diffraction techniques and high‐resolution electron microscopy. The results not only mark tangible progress in manufacturing EuO/Si contacts but also provide a general framework for monolithic integration of functional oxides with semiconductor substrates.

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Giant quadratic magneto-optical Kerr effect in (Eu,Gd)O films for magnetic field sensing

Cited by 14 publications

References 35 publications

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅

Chaos at Interface Brings Order into Oxide/Silicon Structure

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Giant quadratic magneto-optical Kerr effect in (Eu,Gd)O films for magnetic field sensing

Cited by 14 publications

References 35 publications

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

Femtosecond optical orientation triggering magnetization precession in epitaxial EuO films

Controlling the Magneto-Optical Response in Ultrathin Films of EuO1–xvia Interface Engineering with Ferroelectric BaTi2O5

Chaos at Interface Brings Order into Oxide/Silicon Structure

Contact Info

Product

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About

Controlling the Magneto-Optical Response in Ultrathin Films of EuO_1–xvia Interface Engineering with Ferroelectric BaTi₂O₅