Graded barrier single quantum well lasers - Theory and experiment

Kasemset, D.; Hong, Chi-Shain; Patel, Navin B.; Dapkus, P. D.

doi:10.1109/jqe.1983.1071974

Cited by 64 publications

(14 citation statements)

References 9 publications

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“…54,55 This is mainly attributed to the additional photo-generated carriers in the grading layer. 56,57 These carriers flow into the active region, creating higher luminance performance similar to the observation of a higher intensity of Peak B in the AlGaN GRINSCH diode. Figure 2(a)), we simply employed a standard photolithography procedure to define the current spreading layer for the hole injection.…”

Section: Photoluminescence and Electroluminescence Characterizationmentioning

confidence: 62%

“…and Tsang et al 54,55 GaAs and InP-based GRINSCH laser diodes, with either linear or parabolic shape of the graded-index profile, have achieved extremely low threshold currents and thus have been commercialized in semiconductor industry. 56,57 Recently, a GRINSCH-based InGaN laser diode was also demonstrated, showing very promising low threshold current density of 3.5 kA/cm 2 , compared with the classical step-index structure. 61 However, for the aforementioned devices, the advantage of polarization doping technique has not been taken reported AlGaN MQW-based lasers has only 1~3% optical confinement.…”

Section: A Step Toward Uv Laser Diode Implementationmentioning

confidence: 99%

See 1 more Smart Citation

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

Sun¹,

Priante²,

Min³

et al. 2018

ACS Photonics

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High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers constrain the performance of the ultraviolet light emitting diodes and lasers at shorter wavelengths. To address those technical challenges, we design, grow, and fabricate a novel nanowire structure adopting a graded-index separate confinement heterostructure (GRINSCH) in which the active region is sandwiched between two compositionally graded AlGaN layers, namely a GRINSCH diode. Calculated electronic band diagram and carrier concentrations show an automatic formation of a p-n junction with electron and hole concentrations of ~10 18 /cm 3 in the graded AlGaN layers without intentional doping. The transmission electron microscopy experiment confirms the composition variation in the axial direction of the graded AlGaN nanowires. Significantly lower turn-on voltage of 6.5 V (reduced by 2.5 V) and smaller series resistance of 16.7 Ω (reduced by nearly four times) are achieved in the GRINSCH diode, compared with the conventional p-in diode. Such an improvement in the electrical performance is mainly attributed to the effectiveness of polarization-induced nand p-doping in the compositionally graded AlGaN layers. In consequence, the carrier transport and injection efficiency of the GRINSCH diode are greatly enhanced, which leads to a lower turn-on voltage, smaller series resistance, higher output power, and enhanced device efficiency. The calculated carrier distributions (both

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Section: Photoluminescence and Electroluminescence Characterizationmentioning

confidence: 62%

Section: A Step Toward Uv Laser Diode Implementationmentioning

confidence: 99%

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

Sun¹,

Priante²,

Min³

et al. 2018

ACS Photonics

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show abstract

“…Specifically the QW laser of low band gap semiconductors in the infrared zone is of greater interest for its application as optical source in the present day fiber optic communication processes. Therefore, the QW laser devices of low band gap semiconductors have been widely studied both theoretically and experimentally for the last two decades [1][2][3]. But most of the earlier models have been developed considering parabolic energy band structure which is suitable only in case of wide band gap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Effect of nonparabolicity on Quantum Well laser of low band gap semiconductors

Bhattacharyya

Dey

Maiti³

2013

2013 International Conference on Microwave and Photonics (ICMAP)

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Three energy band model of Kane has been used to develop a general theory of optical gain for Quantum Well (QW) laser of low band gap semiconductors. Wave vector dependence on optical matrix element (OME) has been incorporated in determining the laser gain for these semiconductors having nonparabolic energy band profile. The effect of nonparabolicity is seen to increase the monochromaticity of laser. Intraband scattering and auger recombination present in the system have been found to play a major role in shifting the gain peak towards shorter wavelength, reduce line width and decrease the peak gain.

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“…The optical gain is one of the most basic properties of lasers from theoretical point of view and its accurate modeling is essential to design and optimization of a laser diodes. This property was therefore extensively investigated in bulk and quantum well lasers of semiconductor materials. Most of the previous theoretical models, however, assumed that the optical matrix elements (OME) is constant with respect to the electron wave vector

((), \overset{true\to}{k})

in evaluating the interband transition matrix element, which is in fact, an oversimplification to reality and a re‐examination to the gain model is required for a proper analysis of lasers operation.…”

Section: Introductionmentioning

confidence: 99%

“…The optical gain is one of the most basic properties of lasers from theoretical point of view and its accurate modeling is essential to design and optimization of a laser diodes. This property was therefore extensively investigated in bulk [1][2][3] and quantum well [4][5][6][7] lasers of semiconductor materials. Most of the previous theoretical models, however, assumed that the optical matrix elements (OME) is constant with respect to the electron wave vector k !…”

Section: Introductionmentioning

confidence: 99%

Generalized optical gain analysis in nonparabolic semiconductor laser

Dey

Maiti

Chanda

2013

Int J Numerical Modelling

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SUMMARY A simple generalized theory is developed for optical gain of nonparabolic semiconductor lasers based on the three‐band model of Kane, by taking into account the wave‐vector (k→) dependence of the optical matrix element. The gain in laser of nonparabolic semiconductors is demonstrated, by taking InAs, InSb, Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples, and it has been found that the peak of the gain spectra for a given carrier density is higher in the three‐band model of Kane than those with parabolic energy band approximations in all the cases. The difference between the peak of gain spectra for three‐band model and the parabolic band model is greater for laser of narrow band gap materials in comparisons with that of laser of wide band gap materials, thereby reveals the necessity for inclusion of the nonparabolicity in modeling lasers of small band gap materials. The well‐known results for wide band gap materials having parabolic energy bands has also been obtained from our generalized formulation under certain limiting condition. Copyright © 2013 John Wiley & Sons, Ltd.

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Graded barrier single quantum well lasers - Theory and experiment

Cited by 64 publications

References 9 publications

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

Effect of nonparabolicity on Quantum Well laser of low band gap semiconductors

Generalized optical gain analysis in nonparabolic semiconductor laser

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