Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm

Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1550 nm with output powers exceeding 1.6 mW into a multi-mode fiber, threshold currents below 25 mA and with > 30 dB side-mode suppression ratios are reported. These lasers consist of a 500 µm long horizontal cavity, and a 10 µm long second-order outcoupler grating sandwiched between 250 µm long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 2.5 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 9 degrees.

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1550-nm single-mode grating-outcoupled surface emitting lasers

Patterson

Masood

Amarasinghe

et al. 2004

SPIE Proceedings

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1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers with a detuned second-order grating

et al. 2004

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Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm

Cited by 2 publications

References 4 publications

1550-nm single-mode grating-outcoupled surface emitting lasers

1550-nm single-mode grating-outcoupled surface emitting lasers

1310-nm single-mode grating-outcoupled surface-emitting semiconductor lasers with a detuned second-order grating

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