Growth and characterization of ErF3 doped BaF2 crystals

Nicoarǎ, Irina; Stef, Marius; Buşe, Gabriel; Racu, Andrei

doi:10.1016/j.jcrysgro.2020.125817

Cited by 10 publications

(3 citation statements)

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“…The crystals were obtained in vacuum (~10 −1 Pa) using a spectral pure graphite crucible, with a pulling rate of 4 mm h −1 . More details about the growth conditions are described in [7,9]. The obtained crystals were transparent,~10 mm in diameter and~5 cm in length, free of visible inclusions or cracks (Figure 1).…”

Section: Methodsmentioning

confidence: 99%

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Luminescence Properties and Judd–Ofelt Analysis of Various ErF3 Concentration-Doped BaF2 Crystals

et al. 2021

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The influence of erbium ion concentration on the optical properties of BaF2:ErF3 crystals was investigated. Four ErF3 concentration (0.05, 0.08, 0.15 and 0.5 mol% ErF3)-doped BaF2 crystals were obtained using the Bridgman technique. Room temperature optical absorption in the 250–850 nm spectral range was measured, and the photoluminescence (PL) and decay times were also investigated. The Judd–Ofelt (JO) approximation was used, taking into account four absorption peaks (at 377, 519, 653 and 802 nm). The JO intensity parameters, Ωt (t = 2, 4, 6), were calculated. The influence of the ErF3 concentration on the JO parameters, branching ratio, radiative transition probability and radiative lifetime were studied. The obtained results were compared with measured values and with those reported in the literature. Under excitation at 380 nm, the well-known green (539 nm) and red (668 nm) emissions were obtained. The calculated and experimental radiative lifetimes were in millisecond range for green and red emissions. The intensity of the PL spectra varied with the Er3+ ion concentration. The emission intensity increased linearly or exponentially, depending on the ErF3 concentration. Under excitation at 290 nm, separate to the green and red emissions, a new UV emission band (at 321 nm) was obtained. Other research has not reported the UV emission or the influence of ErF3 concentration on emission behavior.

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Section: Methodsmentioning

confidence: 99%

“…Using a site-selective laser excitation method, Wells [3] proved that, in the case of BaF 2 , the dominant center has C 3v symmetry for low ErF 3 concentrations (<0.1 mol%). The dielectric relaxation studies [4][5][6][7] also pointed out that only trigonal C 3v (NNN) centers are created.…”

Section: Introductionmentioning

confidence: 99%

Luminescence Properties and Judd–Ofelt Analysis of Various ErF3 Concentration-Doped BaF2 Crystals

et al. 2021

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“…A broad PL peak was found to result from trap state emission from defects or electronic centers introduced during the synthesis of BaF2 crystals [6,7]. However, after the addition of rare-earth (RE) dopants, RE-doped BaF2 materials can show various PL peaks [8,9], making this an interesting system to explore. RE-doped materials are of great interest due to their desirable PL properties and potential applications including for solar cells [10,11], bioimaging [12], and light emitting diodes (LEDs) [13].…”

Section: Introductionmentioning

confidence: 99%