Growth and characterization of In<sub>x</sub>Al<sub>1−x</sub>N films on silicon substrate by magnetron sputtering method

Wang, Xuewen; Li, Zhenjie; Zhai, Chunxue; Duan, Yuqi; Gao, Han; Su, Xingxing; Liu, Wenwen; Zhang, Zhiyong; Zhao, Wu; Yan, J F

doi:10.1088/2053-1591/aaef0d

Cited by 3 publications

(3 citation statements)

References 23 publications

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“…The experimental values of the InxAl1-xN bandgap width of different components are shown in Table 2 [4]. Both theoretical and experimental results show that, with the decrease of x, the forbidden bandwidth of InxAl1-xN gradually decreases, which is in line with Vegard's Law.…”

Section: Analysis Of Energy Band and Density Of Statessupporting

confidence: 53%

“…There makes it possible to widely use in power electronic equipment, sensors, high-efficiency solar cells, high electron mobility transistors (HEMT), and other fields [2,3]. As an III-V nitride semiconductor, InxAl1-xN has a large and adjustable bandgap ranging from 0.7 eV to 6.2 eV [4], as well as excellent photoelectric properties, so it has become a current research hotspot.…”

Section: Introduction *mentioning

confidence: 99%

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First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

Wang¹,

ZHAO²,

BAI³

et al. 2022

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This paper employs the Heyd-Scuseria-Ernzerhof (HSE) function to research electronic structures of monolayer InxAl1-xN with different compositions (x = 0, 0.25, 0.5, 0.75, 1) based on the first-principles, and the optical properties of single-layer InxAl1-xN are calculated by Generalized Gradient Approximation-Perdew Burke Ernzerhof (GGA-PBE) function. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of the complex dielectric function and absorption spectrum. The calculation results show that with the increase of x, the static dielectric constant increases, the electron transition ability increases, and the absorption peak intensity in the light absorption spectrum increases. It can conclude that the InxAl1-xN compound can theoretically achieve the adjustable Eg and photoelectric performance with x, which will apply in making various optoelectronic devices, including solar cells and sensors.

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Section: Analysis Of Energy Band and Density Of Statessupporting

confidence: 53%

Section: Introduction *mentioning

confidence: 99%

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

Wang¹,

ZHAO²,

BAI³

et al. 2022

Self Cite

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show abstract

“…Glutamate decarboxylase antibody (GADA), protein tyrosine phosphatase autoantibody (IA−2A) and zinc transporter 8 autoantibody (ZnT8A) were detected by radioligand assays (RLAs) with a respective sensitivity and specificity of 82% and 97.8% for GADA, 76% and 100% for IA-2A, and 72% and 100% for ZnT8A according to the 2016 islet autoantibody standardization program (IASP 2016) (24). The presence of IAA was determined by the electrochemiluminescence (ECL) method, with a sensitivity of 52% and specificity of 100%, according to the IASP 2020 (25).…”

Section: Iselet Autoantibody Assaysmentioning

confidence: 99%

Clinical and HLA genotype analysis of immune checkpoint inhibitor-associated diabetes mellitus: a single-center case series from China

Liu

Zhao

et al. 2023

Front. Immunol.

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ObjectiveTo investigate the clinical characteristics and HLA genotypes of patients with immune checkpoint inhibitor-associated diabetes mellitus (ICI-DM) in China.MethodsWe enrolled 23 patients with ICI-DM and 51 patients with type 1 diabetes (T1D). Clinical characteristics of the patients were collected. HLA-DRB1, HLA-DQA1, and HLA-DQB1 genotyping was conducted via next-generation sequencing.ResultsThe ICI-DM patients had a male predominance (70.6%), a mean body mass index (BMI) of 21.2 ± 3.5 kg/m2, and a mean onset of ICI-DM in 5 (IQR, 3-9) cycles after ICI therapy. Most (78.3%) ICI-DM patients were treated with anti-PD-1, 78.3% presented with diabetic ketoacidosis, and all had low C-peptide levels and received multiple insulin injections. Compared to T1D patients, ICI-DM patients were significantly older (57.2 ± 12.4 vs 34.1 ± 15.7 years) and had higher blood glucose but lower HbA1c levels (P<0.05). Only two (8.7%) ICI-DM patients were positive for islet autoantibodies, which was lower than that in T1D patients (66.7%, P<0.001). A total of 59.1% (13/22) of ICI-DM patients were heterozygous for an HLA T1D risk haplotype, and DRB1*0901-DQA1*03-DQB1*0303 (DR9) and DRB1*0405-DQA1*03-DQB1*0401 were the major susceptible haplotypes. Compared to T1D, the susceptible DR3-DQA1*0501-DQB1*0201 (DR3) and DR9 haplotypes were less frequent (17.7% vs 2.3%; P=0.011 and 34.4% vs 15.9%; P=0.025), whereas the protective haplotypes (DRB1*1101-DQA1*05-DQB1*0301 and DRB1*1202-DQA1*0601-DQB1*0301) were more frequent in ICI-DM patients (2.1% vs 13.6%; P=0.006 and 4.2% vs 15.9%; P=0.017). None of the ICI-DM patients had T1D-associated high-risk genotypes DR3/DR3, DR3/DR9, and DR9/DR9. Among the 23 ICI-DM patients, 7 (30.4%) presented with ICI-associated fulminant type 1 diabetes (IFD), and 16 (69.6%) presented with ICI-associated type 1 diabetes (IT1D). Compared to IT1D patients, IFD patients exhibited marked hyperglycemia and low C-peptide and HbA1c levels (P<0.05). Up to 66.7% (4/6) of IFD patients were heterozygous for reported fulminant type 1 diabetes susceptibility HLA haplotypes (DRB1*0405-DQB1*0401 or DRB1*0901-DQB1*0303).ConclusionICI-DM shares similar clinical features with T1D, such as acute onset, poor islet function and insulin dependence. However, the lack of islet autoantibodies, the low frequencies of T1D susceptibility and high frequencies of protective HLA haplotypes indicate that ICI-DM represents a new model distinct from classical T1D.

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Electronic Structure, Optical and Thermoelectric Properties of Al1-Xinxn and Ga1-Xinxn Alloys

Pachuau

2022

SSRN Journal

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Growth and characterization of In_xAl_1−xN films on silicon substrate by magnetron sputtering method

Cited by 3 publications

References 23 publications

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

Clinical and HLA genotype analysis of immune checkpoint inhibitor-associated diabetes mellitus: a single-center case series from China

Electronic Structure, Optical and Thermoelectric Properties of Al1-Xinxn and Ga1-Xinxn Alloys

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Growth and characterization of InxAl1−xN films on silicon substrate by magnetron sputtering method

Cited by 3 publications

References 23 publications

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

First-principles Calculations of the Electronic Structure and Optical Properties of Graphene-like InxAl1-xN Monolayers

Clinical and HLA genotype analysis of immune checkpoint inhibitor-associated diabetes mellitus: a single-center case series from China

Electronic Structure, Optical and Thermoelectric Properties of Al1-Xinxn and Ga1-Xinxn Alloys

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Growth and characterization of In_xAl_1−xN films on silicon substrate by magnetron sputtering method