Growth behavior and microstructure of oxide scales grown on WSi2 coating

Kim, Han-Sung; Yoon, Jin‐Kook; Kim, Gyeung-Ho; Doh, Jung-Mann; Kwun, S.I.; Hong, Kwangjoon

doi:10.1016/j.intermet.2007.11.008

Cited by 49 publications

(23 citation statements)

References 16 publications

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“…6a and 7a). This is unlike WSi 2 coating on W and MoSi 2 coating on Mo, where a thin sub-silicide layer (W 5 Si 3 in WSi 2 coating and Mo 5 Si 3 in MoSi 2 coating) develops in the coating adjoining the oxide layer [23,27]. The surface morphology of the sample isothermally oxidized for 9 h at 1300°C is presented in Fig.…”

Section: Performance Of Coatingmentioning

confidence: 99%

Microstructure and High Temperature Oxidation Performance of Silicide Coating on Nb-Based Alloy C-103

2010

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The microstructure and oxidation resistance of NbSi 2 coating formed on Nb-based alloy C-103 by a pack siliconization process have been studied. The as-formed coating consists of an outer NbSi 2 layer and an inner Nb 5 Si 3 layer. A NbSi 2 -Nb 5 Si 3 two-phase zone is also present between the above two layers. Weight-change data obtained under isothermal and cyclic oxidation in air at 1100 and 1300°C, suggests that the coating gives oxidation protection up to about 4 h. The oxide scale that formed on the coating during oxidation exposure consists of an outer glassy silica layer and an inner Nb 2 O 5 -silica mixed layer. Nb 2 O 5 phase is also present in the outer silica scale in the form of elongated particles. Oxidation protection is achieved primarily by the presence of the glassy silica layer on the surface. Spallation of this layer during thermal cycling causes significant reduction in the protective life of the coating.

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Section: Performance Of Coatingmentioning

confidence: 99%

Microstructure and High Temperature Oxidation Performance of Silicide Coating on Nb-Based Alloy C-103

2010

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“…At higher temperatures where a protective SiO 2 scale can be established the oxidation reaction is described in reaction (2). Selective oxidation of Si takes place.…”

Section: Introductionmentioning

confidence: 99%

Oxidation behaviour of a (Mo, W)Si2-based composite in dry and wet oxygen atmospheres in the temperature range 350–950°C

Hellström

Tang

Jonsson

et al. 2009

Journal of the European Ceramic Society

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“…The oxidation kinetics of WSi 2 for temperatures above 1570 K is approximately described by parabolic dependences [56,57].…”

Section: High-temperature Oxidation Of Silicidesmentioning

confidence: 99%

“…The papers [56,57] pay major attention to the structure of scales (transmission electron microscopy and xray spectroscopy) formed on tungsten-based diffusion WSi 2 coatings oxidized between 1070 and 1570 K. The oxidation process is divided into three temperature ranges. At 1270 K and below, the oxide film consists of WO 3 grains embedded into the glassy SiO 2 matrix.…”

Section: High-temperature Oxidation Of Silicidesmentioning

confidence: 99%

High-temperature and electrochemical oxidation of transition metal silicides

Chirkin

Lavrenko

Talash

2009

Powder Metall Met Ceram

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546.281:541.138 High-temperature and electrochemical oxidation of transition metal silicides, which are widely used in microelectronics as ohmic contacts and protective coatings for high-temperature alloys, are discussed in this review. The process of oxide film formation during annealing or anodizing is extremely important for both applications of silicides. It is discussed for three disilicides: MoSi 2 , WSi 2 , and TiSi 2 . It has been shown that different types of oxide films may form on the disilicide surface depending on the thermodynamic (formation enthalpies of silicides and associated oxides) and kinetic (diffusion coefficients of silicon in silicide and oxygen diffusivity in oxide) factors: onephase (MoSi 2 ), mixed (WSi 2 ), and multilayer (TiSi 2 ) films. The "silicide pest" phenomenon is discussed in terms of thermodynamic, kinetic, and structural factors influencing the pesting. Analysis of electrochemical oxidation mechanisms for silicides in various electrolyte media reveals numerous similarities between anodic and high-temperature oxidation mechanisms. It is shown that slow silicon transport during anodic treatment at room temperature leads to the formation of multiphase mixed oxide films under electrochemical polarization.Keywords: transition metal silicides, kinetics of high-temperature oxidation, formation mechanism, protective oxide films containing SiO 2 , anodic electrochemical oxidation, electrolyte solutions.Binary refractory compounds of elements from groups 4-6 of the Periodic Table with carbon, boron, nitrogen, and silicon--carbides, borides, nitrides, silicides, and associated composites⎯are very promising materials owing to their excellent, as compared with the initial metals, high-temperature oxidation resistance and chemical stability. These materials are widely used in different engineering areas. New composite materials based on refractory compounds with desired properties constantly show up.Transition metal silicides are widely used in modern engineering. They are remarkable for their significant physical and technical properties: relatively low density, metal conductivity, high corrosion resistance, which are needed in engineering areas using high temperatures, rates, loads, and corrosive media. These are aerospace structures, high-temperature heaters, corrosion protective coatings on refractory alloys, etc. [1]. For example, the high melting temperature combined with the corrosion resistance of semiconducting silicides (Cr, Mn, and Fe disilicides) are the very properties required for thermoelectric generators that convert solar energy into electric energy.

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Growth behavior and microstructure of oxide scales grown on WSi2 coating

Cited by 49 publications

References 16 publications

Microstructure and High Temperature Oxidation Performance of Silicide Coating on Nb-Based Alloy C-103

Microstructure and High Temperature Oxidation Performance of Silicide Coating on Nb-Based Alloy C-103

Oxidation behaviour of a (Mo, W)Si2-based composite in dry and wet oxygen atmospheres in the temperature range 350–950°C

High-temperature and electrochemical oxidation of transition metal silicides

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