Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

Zhang, Haodong; Shao, Yongliang; Zhang, Lei; Wu, Yongzhong; Liu, Xiaoyan; Dai, Yuanbin; Tian, Yuan

doi:10.1039/c2ce25363a

Cited by 24 publications

(16 citation statements)

References 29 publications

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“…From Figure 2b, two peaks located at 566.1 and 733.4 cm −1 , corresponding to E 2 (high) and A 1 (LO) phonon peak, are clearly observed. The E 2 (high) phonon peak can be deployed to calculate the in-plane stress in the GaN epilayer by the following equation4041:where σ is the residual stress and Δ ω is the E 2 (high) phonon peak shift. As we know, the E 2 (high) phonon peak of stress-free GaN is believed to be located at 566.2 cm −1 , which is blue shift of about 0.1 cm −1 corresponding to a tensile stress of about 0.023 GPa.…”

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confidence: 99%

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

Gao

et al. 2015

Sci Rep

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Highly-efficient GaN-based light-emitting diode (LED) wafers have been grown on La0.3Sr1.7AlTaO6 (LSAT) substrates by radio-frequency molecular beam epitaxy (RF-MBE) with optimized growth conditions. The structural properties, surface morphologies, and optoelectronic properties of as-prepared GaN-based LED wafers on LSAT substrates have been characterized in detail. The characterizations have revealed that the full-width at half-maximums (FWHMs) for X-ray rocking curves of GaN(0002) and GaN(10-12) are 190.1 and 210.2 arcsec, respectively, indicating that high crystalline quality GaN films have been obtained. The scanning electron microscopy and atomic force microscopy measurements have shown the very smooth p-GaN surface with the surface root-mean-square (RMS) roughness of 1.3 nm. The measurements of low-temperature and room-temperature photoluminescence help to calculate the internal quantum efficiency of 79.0%. The as-grown GaN-based LED wafers have been made into LED chips with the size of 300 × 300 μm2 by the standard process. The forward voltage, the light output power and the external quantum efficiency for LED chips are 19.6 W, 2.78 V, and 40.2%, respectively, at a current of 20 mA. These results reveal the high optoelectronic properties of GaN-based LEDs on LSAT substrates. This work brings up a broad future application of GaN-based devices.

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confidence: 99%

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Wang

Yang

Gao

et al. 2015

Sci Rep

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“…It is known that the untrained GaN E 2 (high) Raman mode has a value of 566.2 cm À 1 [36]. In our case, the E 2 (high) values of Samples A, B, and C are 577.6, 577.4, and 576.5 cm À 1 , respectively.…”

Section: Resultsmentioning

confidence: 85%

“…It can be noted that the value of E 2 (high) phonon mode is sensitive to the in-plane stress of the films. Higher or lower value of E 2 (high) phonon mode is responding to tensile or compressive stress [35] Moreover, the stress value of the asgrown GaN films is normally calculated from the E 2 (high) phonon frequency by the following equation [36]:…”

Section: Resultsmentioning

confidence: 99%

Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

Yang

Wang

Liu

et al. 2015

Materials Science in Semiconductor Processing

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“…It appears compressive stress when E 2 frequency is larger than the standard value. As we all know, the amount of stress relaxation can be calculated by the following equation [23,24]:…”

Section: Resultsmentioning

confidence: 99%

Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser

Zou

Lin

et al. 2018

Applied Sciences

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In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which brings much less crystal boundary. There is much less compressive stress between the GaN crystals which improves the smoothness and compactness of GaN epilayers. This result demonstrates a significant improvement in the crystallinity of the c-plane GaN epitaxial layers grown on striped PSS.

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Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

Cited by 24 publications

References 29 publications

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates

Effect of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition

Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser

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