Growth of well-aligned Bi nanowire on Ag(111)

Zhang, Hong Liang; Chen, Wei; Wang, Xuesen; Yuhara, J.; Wee, Andrew Thye Shen

doi:10.1016/j.apsusc.2009.07.016

Cited by 27 publications

(24 citation statements)

References 30 publications

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“…The observation of paired layer growth of Bi on a variety of substrates [56,[58][59][60] is consistent with the formation of a black-phosphorous-like (BP) thin-film allotrope [see Fig. 1(c)] [59].…”

Section: A Bismuth and Film Morphologymentioning

confidence: 52%

Origin of the moiré pattern in thin Bi films deposited on HOPG

et al. 2015

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Thin Bi(110) films deposited on highly oriented pyrolytic graphite (HOPG) exhibit a pronounced moiré pattern; here the origin of the moiré pattern is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS), high-resolution transmission electron microscopy (HR-TEM), and density functional theory (DFT). It is shown that the moiré pattern forms only on islands which are misoriented by ∼30• with respect to the usual substrate symmetry direction. Two models of the moiré pattern are presented: (i) a commensurate monolayer construction (CMC) for rectangular overlayer symmetry on hexagonal substrates and (ii) a qualitative model based on simple superposition of a Bi overlayer on graphene. The CMC model has previously been applied only to systems with pure hexagonal symmetry. Both models generate moiré patterns with key parameters (period, angles of the pattern measured with respect to the main HOPG and Bi crystal directions) that are consistent with the experimental results, but development of a fully predictive/quantitative model remains an outstanding challenge. The electronic structure of the moiré pattern is investigated using STS and DFT, and it is found that the local density of states (LDOS) is modulated by the moiré pattern. These results are consistent with a picture in which a small distortion of Bi atomic positions at the film-substrate interface results in periodic modulation of the LDOS, hence allowing observation of the moiré pattern in STM images.

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Section: A Bismuth and Film Morphologymentioning

confidence: 52%

Origin of the moiré pattern in thin Bi films deposited on HOPG

et al. 2015

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“…We show that this phase separation induces a multi-atomic rearrangement of Cu and Bi atoms inside the BiCu 2 phase. After the completion of a full monolayer, we observe the formation of three-dimensional crystallites, following a Stranski-Krastanov growth mode (not shown here), similarly to the growth of Bi/Ag(111) [21].…”

Section: Introductionmentioning

confidence: 77%

Growth of Bi on Cu(111): Alloying and dealloying transitions

et al. 2013

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“…The deposition rate was calibrated to be constant at 0.05 ML/min on Ag(111) (1 ML is defined as 1 atomic layer of Bi(011̅ 2), i.e., 9.3 × 10 14 cm −2 ) using a quartz microbalance and STM in the LT-STM system. 38,39 ■ RESULTS AND DISCUSSION Top and side views of the Bi(011̅ 2) surface are schematically shown in Figure 1. The surface is reconstructed into zigzag lines along the [112̅ 0] direction with a unit cell of 4.54 Å × 4.75 Å containing two Bi atoms.…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

Scanning Tunneling Microscope and Photoemission Spectroscopy Investigations of Bismuth on Epitaxial Graphene on SiC(0001)

et al. 2014

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The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms onedimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011̅ 2) ∥ EG(0001) and Bi⟨112̅ 0⟩ aligned well with EG⟨112̅ 0⟩. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons. ■ INTRODUCTIONBismuth (Bi) is a group-V semimetal with a charge carrier concentration far less than normal metals, having small effective electron mass and long Fermi wavelength (∼40 nm at room temperature). 1−3 Because of quantum and finite size effects, Bi nanostructures exhibit interesting physical properties, such as semimetal to semiconductor transition, 4−6 high thermoelectric efficiency, 7 and superconductivity. 8 Additionally, strong spin− orbit coupling on Bi surfaces results in a significant and anisotropic splitting of the surface-state bands, indicating possible applications in spintronics. 9,10 Details of structural and electronic properties of low-index surfaces of bulk Bi can be found in the review by Hofmann. 1 As the electronic properties of Bi nanostructures depend significantly on their structural properties, there have been numerous investigations on their growth. For example, on highly ordered pyrolitic graphite (HOPG), Bi forms islands with striped surface features at a preferred height and with the orientation relationship Bi(011̅ 2) ∥ HOPG(0001) as well as with a preference for Bi⟨112̅ 0⟩ ∥ HOPG⟨101̅ 0⟩. 11−15 Graphene, a single layer of graphite, has attracted great interest in both academia and industry due to its superlative electronic properties 16−19 such as high charge carrier mobility even at high charge carrier concentration at room temperature (RT) 20 and long spin relaxation length up to micrometer scale at RT. 21 Epitaxial graphene (EG) on SiC 22−24 has been proposed as a possible platform for the development of graphene-based electronics. 23−27 There are numerous investigations of adsorbates on graphene, 28−34 for instance, atomic hole doping of EG by simple atomic adsorbates. 29 ARPES measurements have shown that Bi is able to shift the Dirac point toward the Fermi level (E F ), i.e., reducing the n-type doping from the substrate, 29 even though density functional theory (DFT) calculations reveal that the isolated Bi atom is weakly physisorbed on EG. 35 Therefore, understanding the interactions between adsorbates and graphene in real space at atomic level is very important for fundamental understanding and possible applications.In this work, the structural and electronic properties of Bi thin films on EG are systematically investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES...

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Growth of well-aligned Bi nanowire on Ag(111)

Cited by 27 publications

References 30 publications

Origin of the moiré pattern in thin Bi films deposited on HOPG

Origin of the moiré pattern in thin Bi films deposited on HOPG

Growth of Bi on Cu(111): Alloying and dealloying transitions

Scanning Tunneling Microscope and Photoemission Spectroscopy Investigations of Bismuth on Epitaxial Graphene on SiC(0001)

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