Guest editorial for the special issue on noise modeling of high‐frequency semiconductor devices

Abstract

Noise processes in active solid-state devices govern their fundamental operational limits when high sensitivity is required or tight accuracy constraints are in play [1][2][3][4]. Moreover, noise generated in devices often is considered a measure of their quality and reliability.Complex noise processes are inherent to any semiconductor material [5][6][7]. That said, a deep knowledge of the underlying physics often is not required to accomplish the accurate design of a low-noise circuit. What is needed is a clear link between parameters governing microscopic noise processes and macroscopic behavior [8][9][10][11][12][13][14]. This link often is established via modeling and simulation (M&S), which enables the prediction of device performance in real-world circuits operating under tight accuracy constraints. M&S often allows for a characterization of the worst-case performance of noiseimpacted circuits without the need to account for excessively conservative safety margins or engage in costly iterative design approaches [15][16][17][18][19][20][21][22].The goal of this special issue is to assemble recent results and up-to-date surveys addressing the topic of modeling, simulation, and characterization of noise processes in advanced GaAs, GaN, Si, and SiGe devices, ranging from the low-frequency regime to millimeter wave frequencies. A total of 14 refereed papers (including this editorial) comprising 4 invited and 10 contributed papers are included in this special issue:➢ Balestra F, Ghibaudo G, Jomaah J. Modeling of low-frequency noise in advanced CMOS devices.Invited paper. ➢ Randa J. Numerical modeling and uncertainty analysis of transistor noise parameter measurements. Invited paper. ➢ Yu P, Chen B, Gao J. Microwave noise modeling for MOSFETs. Invited paper. ➢ Boglione L. A novel theoretical analysis for the determination of the noise parameters applicable to millimeter-wave frequencies. Invited paper. ➢ Bonani F, Donati Guerrieri S, Ghione G. Cyclostationary noise modeling of radio frequency devices. It is worth noting that our Call for Papers resulted in a geographically balanced contribution of papers, demonstrating a widespread and timely interest by the international research community in the topic. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDSInt. J. Numer. Model. 2015; 28:611-612 Published online 25 August 2015 in Wiley Online Library (wileyonlinelibrary.com).