Gunn-Hilsum Effect Electronics

Nonlinear semiconductor transport simulations based on the WIAS-TeSCA code are presented. Various regimes of lowtemperature breakdown and current filamentation in n-GaAs are investigated using a drift-diffusion model with nonlinear generation-recombination kinetics. Nonlinear charge density waves are found in two-dimensional simulations of a point contact geometry with and without an additional perpendicular magnetic field. The numerical simulations of the nonlinear spatio-temporal dynamics are complemented by a linear stability analysis which reveals the possibility of undamped longitudinal fluctuations in the filamentary regime.

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Simulation of longitudinal instabilities in filamentary current flow during low‐temperature impurity breakdown in semiconductors

Murawski

Schwarz

Novák

et al. 2005

Z Angew Math Mech

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Bifurcation of traveling waves in extrinsic semiconductors

Katzengruber

Krupa

Szmolyan

2000

Physica D: Nonlinear Phenomena

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Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

Nathawat

Kwan

et al. 2017

Sci Rep

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The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS2 field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved in hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo simulations, which highlight the sensitivity of the negative differential conductance to the equilibrium populations of the different valleys. At high drain currents (>10 μA/μm) avalanching breakdown is also observed, and is attributed to trap-assisted inverse Auger scattering. This mechanism is not normally relevant in conventional semiconductors, but is possible in WS2 due to the narrow width of its energy bands. The various results presented here suggest that WS2 exhibits strong potential for use in hot-electron devices, including compact high-frequency sources and photonic detectors.

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Gunn-Hilsum Effect Electronics

Cited by 8 publications

References 185 publications

Simulation of longitudinal instabilities in filamentary current flow during low‐temperature impurity breakdown in semiconductors

Simulation of longitudinal instabilities in filamentary current flow during low‐temperature impurity breakdown in semiconductors

Bifurcation of traveling waves in extrinsic semiconductors

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

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